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Siehe Technische Spezifikationen

K4S281632K-UI75 +BOM

RoHS compliant synchronous DRAM with 0.80mm pitch

Hersteller:

Samsung Semiconductor
Herstellerteil #:

K4S281632K-UI75
Datenblatt:

K4S281632K-UI75 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.02

K4S281632K-UI75 Allgemeine Beschreibung

In the world of high-performance computing and networking, the K4S281632K-UI75 stands out as a top contender. Its high-speed operation, large capacity, and efficient organization make it an indispensable component for any system that demands speed and reliability. Whether you're building a supercomputer or designing a network infrastructure, this chip will provide the power and performance you need to stay ahead of the curve

Hauptmerkmale

Robust data encryption for secure storage and transmission
Fast boot times for rapid system initialization
Advanced thermal management for reliable operation
Easy software updates for ongoing improvement

Anwendung

For mobile use
Great for tablets
Perfect for cameras

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
ECCN Code	EAR99	HTS Code	8542.32.00.02
Access Mode	FOUR BANK PAGE BURST	Access Time-Max	5.4 ns
Additional Feature	AUTO/SELF REFRESH	Clock Frequency-Max (fCLK)	133 MHz
I/O Type	COMMON	Interleaved Burst Length	1,2,4,8
JESD-30 Code	R-PDSO-G54	Length	22.22 mm
Memory Density	134217728 bit	Memory IC Type	SYNCHRONOUS DRAM
Memory Width	16	Moisture Sensitivity Level	3
Number of Functions	1	Number of Ports	1
Number of Terminals	54	Number of Words	8388608 words
Number of Words Code	8000000	Operating Mode	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	8MX16	Output Characteristics	3-STATE
Peak Reflow Temperature (Cel)	260	Qualification Status	Not Qualified
Refresh Cycles	4096	Seated Height-Max	1.2 mm
Self Refresh	YES	Sequential Burst Length	1,2,4,8,FP
Standby Current-Max	0.002 A	Supply Current-Max	0.2 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	3 V
Supply Voltage-Nom (Vsup)	3.3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Form	GULL WING	Terminal Pitch	0.8 mm
Terminal Position	DUAL	Width	10.16 mm

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