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K4S641632K +BOM

French Electronic Distributor since 1988

K4S641632K Allgemeine Beschreibung

GENERAL DESCRIPTIONThe K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.FEATURES• JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four banks operation• MRS cycle with address key programs   -. CAS latency (2 & 3)   -. Burst length (1, 2, 4, 8 & Full page)   -. Burst type (Sequential & Interleave)• All inputs are sampled at the positive going edge of the system clock• Burst read single-bit write operation• DQM (x8) & L(U)DQM (x16) for masking• Auto & self refresh• 64ms refresh period (4K cycle)• Pb/Pb-free Package• RoHS compliant for Pb-free Package

Spezifikationen

ECCN (US) EAR99 Part Status Obsolete
Automotive No PPAP No
DRAM Type SDRAM Chip Density (bit) 64M
Organization 4Mx16 Number of Internal Banks 4
Number of Words per Bank 1M Number of Bits/Word (bit) 16
Data Bus Width (bit) 16 Maximum Clock Rate (MHz) 133
Maximum Access Time (ns) 5.4|6 Address Bus Width (bit) 14
Interface Type LVTTL Minimum Operating Supply Voltage (V) 3
Maximum Operating Supply Voltage (V) 3.6 Operating Current (mA) 85
Minimum Operating Temperature (°C) 0 Maximum Operating Temperature (°C) 70
Number of I/O Lines (bit) 16 Packaging Tape and Reel
Mounting Surface Mount PCB changed 54
Pin Count 54 Lead Shape Gull-wing

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