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K9F1G08U0D-SIB0 +BOM

1G bit Nand Flash 128Mx8 TSOP1 Ind Temp

Hersteller:

SAMSUNG
Herstellerteil #:

K9F1G08U0D-SIB0
Datenblatt:

K9F1G08U0D-SIB0 Datenblatt (PDF)
Paket/Koffer:

TSOP48
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an K9F1G08U0D-SIB0

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

K9F1G08U0D-SIB0 Allgemeine Beschreibung

DescriptionOffered in 128Mx8bit, the K9F1G08U0D is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250μs on the (2K+64)Byte page and an erase operation can be performed in typical 2ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0D′s extended reliability by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable app.lications requiring non-volatility. Features• Voltage Supply - 3.3V Device(K9F1G08U0D) : 2.7V ~ 3.6V• Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit• Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte• Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 40μs(Max.) - Serial Access : 25ns(Min.)• Fast Write Cycle Time - Page Program time : 250μs(Typ.) - Block Erase Time : 2ms(Typ.)• Command/Address/Data Multiplexed I/O Port• Hardware Data Protection - Program/Erase Lockout During Power Transitions• Reliable CMOS Floating-Gate Technology -Endurance & Data Retention : Refor to the gualification report -ECC regnirement : 1 bit / 528bytes• Command Driven Operation• Unique ID for Copyright Protection• Package : - K9F1G08U0D-SCB0/SIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F1G08U0D-BCB0/BIB0 : Pb-FREE PACKAGE 63 FBGA (9 x 11 / 0.8 mm pitch)

Hauptmerkmale

1. Capacity: 1Gbit (128M x 8bits)
2. Organization: One 2KByte page consists of 2 blocks (array structures), and each block consists of 64 pages.
3. Voltage supply: 2.7V to 3.6V
4. High-performance random access: 50µs (typical)
5. Program/erase cycles: 100,000 cycles (typical)
6. High-speed clock frequency: Up to 40MHz (Serial Peripheral Interface)

Anwendung

1. Mobile phones and smartphones
2. Digital cameras
3. USB flash drives
4. MP3 players
5. Tablet devices
6. Industrial applications

Spezifikationen

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IC Chips

Servicerichtlinien und andere

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Bewertungen und Rezensionen

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S**a 07.20.2020

This circuit board works well. It could be very helpful if an instruction or circuit diagram was included to show which potentiometer is responsible for voltage adjustment.