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NAND512W3A2SN6E +BOM

512M-bit NAND Flash Memory

NAND512W3A2SN6E Allgemeine Beschreibung

The NAND512W3A2SN6E is a NAND flash memory chip produced by a semiconductor manufacturer. It typically offers a storage capacity of 512 gigabits (Gb), which translates to 64 gigabytes (GB). The "W3" in its name suggests it follows a 3-bit per cell (TLC) architecture, meaning each memory cell can store up to 3 bits of data. This design allows for higher storage density but may trade off some performance and endurance compared to lower bit-per-cell architectures like single-level cell (SLC) or multi-level cell (MLC).The "A2" denotes the second generation of the product line or a specific revision. The "SN6E" indicates the package type and form factor, which could vary depending on the manufacturer's specifications. This NAND flash chip is commonly used in various electronic devices, including smartphones, tablets, solid-state drives (SSDs), and other consumer electronics, where high-density storage with reasonable performance is required. It is important to consult the manufacturer's datasheet for detailed specifications regarding performance, power consumption, and interface protocols

Hauptmerkmale

  • The NAND512W3A2SN6E is a 512Gb NAND Flash memory chip
  • It features a 3
  • 3V operating voltage, 6ns random access time, and a 3
  • 3V power supply
  • It has a x8 I/O interface and operates in a temperature range of -40°C to 85°C
  • The chip is produced by Micron Technology
  • Anwendung

  • Embedded systems
  • Industrial automation
  • Automotive applications
  • Consumer electronics
  • Robotics
  • Internet of Things (IoT) devices
  • Solid-state drives (SSD)
  • Medical devices
  • Networking equipment
  • 0. Telecommunications systems
  • Spezifikationen

    Product Category NAND Flash Series NAND512
    Memory Type NAND Product NAND Flash
    Product Type NAND Flash Subcategory Memory & Data Storage
    Tradename Numonyx

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