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NID6002NT4G +BOM

Advanced Temperature Monitoring and Control

NID6002NT4G Allgemeine Beschreibung

ON Semiconductor's NID6002NT4G is a part of the advanced series of power MOSFETs, designed with the latest smart MOSFET technology process. These power MOSFETs are equipped with integrated thermal and current limits, working seamlessly to offer short circuit protection, ensuring the safety and reliability of the device. Moreover, the integrated Drain−to−Gate Clamp enables the MOSFET to withstand high energy in the avalanche mode, offering an additional layer of protection for the device. Furthermore, the Clamp also provides safety margin against unexpected voltage transients, ensuring the longevity and durability of the MOSFET. Additionally, the integrated Gate−to−Source Clamp offers electrostatic discharge (ESD) protection, ensuring the safety and protection of the device in a variety of applications

Hauptmerkmale

  • Fault diagnosis indicator
  • Overcurrent protection circuit
  • Error detection and correction
  • High-temperature alarm signal
  • Low-battery warning alert
  • System fault self-test

Anwendung

  • Facilitate data transmission
  • Support network infrastructure
  • Enable high-speed connectivity

Spezifikationen

Series HDPlus™ Switch Type General Purpose
Number of Outputs 1 Ratio - Input:Output 1:1
Output Configuration Low Side Output Type N-Channel
Interface On/Off Voltage - Load 60V (Max)
Voltage - Supply (Vcc/Vdd) Not Required Current - Output (Max) 6.5A
Rds On (Typ) 185mOhm Input Type Non-Inverting
Features Auto Restart, Slew Rate Controlled Fault Protection Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number NID6002

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