Bezahlverfahren
PC28F512P33BFD +BOM
NOR Flash Memory
BGA-64-
Hersteller:
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Herstellerteil #:
PC28F512P33BFD
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Datenblatt:
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Mounting Style:
SMD/SMT
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Memory Size:
512 Mbit
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Supply Voltage - Min:
2.3 V
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Supply Voltage - Max:
3.6 V
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EDA/CAD Modelle:
Verfügbarkeit: 9100 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
PC28F512P33BFD Allgemeine Beschreibung
Intel's PC28F512P33BFD flash memory chip is an advanced storage solution with a host of features designed to ensure fast and secure data transfer. With a burst mode for accelerated data transfer, support for both synchronous and asynchronous read operations, and built-in error correction capabilities, this chip offers reliable performance for a variety of electronic devices. Its security feature adds an extra layer of protection, making it an ideal choice for applications requiring secure data storage
Hauptmerkmale
- High-Performance Read, Program and Erase
- – 96 ns initial read access
- – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
- – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
- – 8-, 16-, and continuous-word synchronous-burst Reads
- – Programmable WAIT configuration
- – Customer-configurable output driver impedance
- – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
- – Block Erase: 0.9 s per block (typ)
- – 20 μs (typ) program/erase suspend
- Architecture
- – 16-bit wide data bus
- – Multi-Level Cell Technology
- – Symmetrically-Blocked Array Architecture
- – 256-Kbyte Erase Blocks
- – 1-Gbit device: Eight 128-Mbit partitions
- – 512-Mbit device: Eight 64-Mbit partitions
- – 256-Mbit device: Eight 32-Mbit partitions
- – 128-Mbit device: Eight 16-Mbit partitions
- – Read-While-Program and Read-While-Erase
- – Status Register for partition/device status
- – Blank Check feature
- Quality and Reliability
- – Expanded temperature: –30 °C to +85 °C
- – Minimum 100,000 erase cycles per block
- – 65nm Process Technology
- Power
- – Core voltage: 1.7 V - 2.0 V
- – I/O voltage: 1.7 V - 2.0 V
- – Standby current: 60 μA (typ) for 512-Mbit, 65 nm
- – Deep Power-Down mode: 2 μA (typ)
- – Automatic Power Savings mode
- – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
- Software
- – Micron® Flash data integrator (FDI) optimized
- – Basic command set (BCS) and extended command set (ECS) compatible
- – Common Flash interface (CFI) capable
- Security
- – One-time programmable (OTP) space
- 64 unique factory device identifier bits
- 2112 user-programmable OTP bits
- – Absolute write protection: VPP = GND
- – Power-transition erase/program lockout
- – Individual zero latency block locking
- – Individual block lock-down
- Density and packaging
- – 128Mb, 256Mb, 512Mbit, and 1-Gbit
- – Address-data multiplexed and non-multiplexed interfaces
- – 64-Ball Easy BGA
Spezifikationen
Product Category | NOR Flash | Mounting Style | SMD/SMT |
Memory Size | 512 Mbit | Supply Voltage - Min | 2.3 V |
Supply Voltage - Max | 3.6 V | Active Read Current - Max | 31 mA |
Interface Type | Parallel | Maximum Clock Frequency | 52 MHz |
Organization | 32 M x 16 | Data Bus Width | 16 bit |
Timing Type | Asynchronous, Synchronous | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 85 C | Moisture Sensitive | Yes |
Product Type | NOR Flash | Speed | 95 ns |
Factory Pack Quantity | 300 | Subcategory | Memory & Data Storage |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
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365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 9.100
Minimum Order: 1
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Die unten angegebenen Preise dienen nur als Referenz.
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