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Siehe Technische Spezifikationen

PC48F4400P0TB0EE +BOM

Parallel interface for efficient data transfer

Hersteller:

Alliance Memory, Inc.
Herstellerteil #:

PC48F4400P0TB0EE
Datenblatt:

PC48F4400P0TB0EE Datenblatt (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR (MLC)
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an PC48F4400P0TB0EE

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

PC48F4400P0TB0EE Allgemeine Beschreibung

Blending high density with unparalleled reliability, the PC48F4400P0TB0EE from Intel is an outstanding NAND flash memory chip. Belonging to the esteemed 3D NAND Flash product line, this chip boasts a storage capacity of 4GB and utilizes TLC technology, allowing for maximum data storage potential. As part of the 48-layer generation of Intel's 3D NAND technology, the PC48F4400P0TB0EE offers top-tier performance and is widely used in applications such as SSDs, memory cards, and other storage devices that require non-volatile, high-density storage

Hauptmerkmale

High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz (zero wait states)
—60ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst mode reads
— Burst and Page mode reads in all Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 µs/word
Security
—128-BitOTP Protection Register:
64 unique pre-programmed bits + 64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability
Quality and Reliability
—Temperature Range:–40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX™ IX Process
— 130 nm ETOX™ VIII Process
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
—16-bit wide data bus
Software
— 5 µs (typ.) Program and Erase Suspend latency time
— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
—VCC= 1.70 V to 1.95 V
—VCCQ(90 nm) = 1.7 V to 1.95 V
—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
—VCCQ(130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 µA (typ.)
— Read current: 8 mA (4-word burst, typ.)

Spezifikationen

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR (MLC)
Memory Size	512Mbit	Memory Organization	32M x 16
Memory Interface	CFI	Clock Frequency	52 MHz
Write Cycle Time - Word, Page	-	Access Time	95 ns
Voltage - Supply	2.3V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount

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