Bezahlverfahren
PC28F512M29EWHD +BOM
Non-volatile memory chip suitable for high-speed data storage applications
BGA-64-
Hersteller:
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Herstellerteil #:
PC28F512M29EWHD
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Datenblatt:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Obsolete
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for PC28F512M29EWHD, guaranteed quotes back within 12hr.
Verfügbarkeit: 7636 Stck
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Hauptmerkmale
- High-Performance Read, Program and Erase
- – 96 ns initial read access
- – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
- – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
- – 8-, 16-, and continuous-word synchronous-burst Reads
- – Programmable WAIT configuration
- – Customer-configurable output driver impedance
- – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
- – Block Erase: 0.9 s per block (typ)
- – 20 μs (typ) program/erase suspend
- Architecture
- – 16-bit wide data bus
- – Multi-Level Cell Technology
- – Symmetrically-Blocked Array Architecture
- – 256-Kbyte Erase Blocks
- – 1-Gbit device: Eight 128-Mbit partitions
- – 512-Mbit device: Eight 64-Mbit partitions
- – 256-Mbit device: Eight 32-Mbit partitions
- – 128-Mbit device: Eight 16-Mbit partitions
- – Read-While-Program and Read-While-Erase
- – Status Register for partition/device status
- – Blank Check feature
- Quality and Reliability
- – Expanded temperature: –30 °C to +85 °C
- – Minimum 100,000 erase cycles per block
- – 65nm Process Technology
- Power
- – Core voltage: 1.7 V - 2.0 V
- – I/O voltage: 1.7 V - 2.0 V
- – Standby current: 60 μA (typ) for 512-Mbit, 65 nm
- – Deep Power-Down mode: 2 μA (typ)
- – Automatic Power Savings mode
- – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
- Software
- – Micron® Flash data integrator (FDI) optimized
- – Basic command set (BCS) and extended command set (ECS) compatible
- – Common Flash interface (CFI) capable
- Security
- – One-time programmable (OTP) space
- 64 unique factory device identifier bits
- 2112 user-programmable OTP bits
- – Absolute write protection: VPP = GND
- – Power-transition erase/program lockout
- – Individual zero latency block locking
- – Individual block lock-down
- Density and packaging
- – 128Mb, 256Mb, 512Mbit, and 1-Gbit
- – Address-data multiplexed and non-multiplexed interfaces
- – 64-Ball Easy BGA
Spezifikationen
Pbfree Code | Yes | Part Life Cycle Code | Obsolete |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8542.32.00.51 | Access Time-Max | 100 ns |
Alternate Memory Width | 8 | Command User Interface | YES |
Common Flash Interface | YES | Data Polling | YES |
JESD-30 Code | R-PBGA-B64 | JESD-609 Code | e1 |
Length | 13 mm | Memory Density | 536870912 bit |
Memory IC Type | FLASH | Memory Width | 16 |
Number of Functions | 1 | Number of Sectors/Size | 512 |
Number of Terminals | 64 | Number of Words | 33554432 words |
Number of Words Code | 32000000 | Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | -40 °C |
Organization | 32MX16 | Page Size | 16/32 words |
Parallel/Serial | PARALLEL | Programming Voltage | 2.7 V |
Qualification Status | Not Qualified | Ready/Busy | YES |
Seated Height-Max | 1.4 mm | Sector Size | 128K |
Standby Current-Max | 0.000225 A | Supply Current-Max | 0.031 mA |
Supply Voltage-Max (Vsup) | 3.6 V | Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3 V | Surface Mount | YES |
Technology | CMOS | Temperature Grade | INDUSTRIAL |
Terminal Finish | TIN SILVER COPPER | Terminal Form | BALL |
Terminal Pitch | 1 mm | Terminal Position | BOTTOM |
Toggle Bit | YES | Type | NOR TYPE |
Width | 11 mm |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
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365-Tage-Produkt
Qualitätsgarantie
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In Stock: 7.636
Minimum Order: 1
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1+ | - | - |
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