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PD4M440H KYOCERA Original Wholesale

In Stock: 7.031

Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

PD4M440H Information

Beschreibung

Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Spezifikationen

Part Life Cycle Code Transferred Reach Compliance Code
ECCN Code EAR99 Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 21 A Drain-source On Resistance-Max 0.21 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-XUFM-X7
Number of Elements 2 Number of Terminals 7
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified Surface Mount NO
Terminal Form UNSPECIFIED Terminal Position UPPER
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case

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Shipping Information

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