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R1EV58256BTCNBI#B2 +BOM

EEPROM Memory IC 256Kbit Parallel 85 ns 28-TSOP I

Hersteller:

Renesas Electronics Corporation
Herstellerteil #:

R1EV58256BTCNBI#B2
Datenblatt:

R1EV58256BTCNBI#B2 Datenblatt (PDF)
Series:

R1EV58256BxxN
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

EEPROM

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

R1EV58256BTCNBI#B2 Allgemeine Beschreibung

Support is limited to customers who have already adopted these products.

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.

Hauptmerkmale

Single supply: 2.7 to 5.5 V
Access time: 85 ns (max)/100 ns (max) at 4.5 V ≤ V_CC < 5.5 V 120 ns (max) at 2.7 V ≤ V_CC ≤ 5.5 V
Power dissipation: Active: 20 mW/MHz (typ) Standby: 110 μW (max)
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 10 ms (max)
Automatic page write (64 bytes): 10 ms (max)
Ready/Busy (only the R1EV58256BxxR series)
Data polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MONOS cell technology
10⁵ or more erase/write cycles
10 or more years data retention
Software data protection
Write protection by RES pin (only the R1EV58256BxxR series)
Temperature range: -40 to 85°C
There are lead free products.

Spezifikationen

Series	R1EV58256BxxN	Programmabe	Not Verified
Memory Type	Non-Volatile	Memory Format	EEPROM
Technology	EEPROM	Memory Size	256Kbit
Memory Organization	32K x 8	Memory Interface	Parallel
Write Cycle Time - Word, Page	10ms	Access Time	85 ns
Voltage - Supply	2.7V ~ 5.5V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	R1EV58256

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