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Siehe Technische Spezifikationen

RSD140P06TL +BOM

This product is a P-Channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) constructed with silicon

Hersteller:

Rohm Semiconductor
Herstellerteil #:

RSD140P06TL
Datenblatt:

RSD140P06TL Datenblatt (PDF)
Part Life Cycle Code:

Not Recommended
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an RSD140P06TL

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

RSD140P06TL Allgemeine Beschreibung

Elevate your power management systems with the RSD140P06TL from ROHM. As a leading manufacturer of MOSFETs, ROHM has crafted this product to meet the demanding requirements of modern power supply designs. From its low current operation to its high breakdown resistance, this MOSFET sets a new standard for efficiency and performance

Hauptmerkmale

1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.

Anwendung

SWITCHING

Spezifikationen

Part Life Cycle Code	Not Recommended	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	14 A	Drain-source On Resistance-Max	0.108 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e2	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Pulsed Drain Current-Max (IDM)	28 A
Surface Mount	YES	Terminal Finish	Tin/Copper (Sn98Cu2)
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	10	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	14 A
Rds On - Drain-Source Resistance	84 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	27 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	20 W	Series	RSD140P06
Fall Time	110 ns	Product Type	MOSFET
Rise Time	45 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	240 ns	Typical Turn-On Delay Time	20 ns
Part # Aliases	RSD140P06	Unit Weight	0.011640 oz

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