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Siehe Technische Spezifikationen

RSE002N06TL +BOM

EMT-3 packaged N-Channel MOSFET capable of handling up to 60 volts

Hersteller:

Rohm Semiconductor
Herstellerteil #:

RSE002N06TL
Datenblatt:

RSE002N06TL Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an RSE002N06TL

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

RSE002N06TL Allgemeine Beschreibung

Designed by Renesas Electronics, the RSE002N06TL is a high-quality N-channel MOSFET engineered for power management applications with demanding current requirements. With its 60V rated voltage and a continuous drain current of 32A, this FET is well-equipped to handle high-current tasks with ease. Its low on-resistance of 0.004 ohms delivers efficient power control, making it an excellent choice for power supplies, motor control, and DC-DC converters. Housed in a TO-252 package, it offers easy mounting and superior thermal efficiency, ensuring reliable performance in challenging operational conditions. The RSE002N06TL features a gate threshold voltage of 2V, enabling seamless integration with a wide range of logic level signals and enhancing its adaptability in circuit designs. Additionally, its fast switching speed further solidifies its suitability for efficient power control in various switching applications

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Not Recommended
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	0.25 A
Drain-source On Resistance-Max	3.2 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e1
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.15 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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