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Siehe Technische Spezifikationen

TS3DDR4000ZBAR +BOM

11.2Ω 1 NFBGA-48 Analog Switches / Multiplexers ROHS

Hersteller:

Texas Instruments
Herstellerteil #:

TS3DDR4000ZBAR
Datenblatt:

TS3DDR4000ZBAR Datenblatt (PDF)
Protocols:

DDR2, DDR3, DDR4, MIPI
Configuration:

2:1 SPDT
Number Of Channels:

12
Supply Voltage (max) (V):

3.6
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an TS3DDR4000ZBAR

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

TS3DDR4000ZBAR Allgemeine Beschreibung

The TS3DDR4000ZBAR is a cutting-edge 1:2 or 2:1 high-speed DDR2/DDR3/DDR4 switch designed to revolutionize memory bus systems. With its ability to switch the A port to the B or C port for all bits simultaneously, this switch offers unparalleled performance and flexibility. Operating in DDR2, DDR3, and DDR4 systems, the TS3DDR4000 boasts a proprietary architecture that ensures high bandwidth, low insertion loss, and minimal propagation delay. Compatible with 1.8V logic, this switch features bi-directional channels for enhanced design options. In addition, the TS3DDR4000 includes a low-power mode, further highlighting its efficiency and versatility

Hauptmerkmale

Wide V_DD Range: 2.375 V – 3.6 V
High Bandwidth: 5.6 GHz Typical (single-ended); 6.0 GHz Typical (differential)
Low Switch On-Resistance (R_ON): 8 Ω Typical
Low Bit-to-Bit Skew: 3ps Typical; 6ps Max across All Channels
Low Crosstalk: –34 dB Typical at 1067 MHz
Low Operating Current: 40 µA Typical
Low-Power Mode with Low Current Consumption: 2 µA Typical
I_OFF Protection Prevents Current Leakage in Powered Down State (V_DD = 0 V)
Supports POD_12, SSTL_12, SSTL_15 and SSTL_18 Signaling
ESD Performance:
- 3-kV Human Body Model (A114B, Class II)
- 1-kV Charged Device Model (C101)
8 mm x 3 mm 48-balls 0.65-mm Pitch ZBA Package

Spezifikationen

Protocols	DDR2, DDR3, DDR4, MIPI	Configuration	2:1 SPDT
Number of channels	12	Supply voltage (max) (V)	3.6
Supply voltage (min) (V)	2.375	Ron (typ) (mΩ)	8300
Input/output voltage (min) (V)	0	Input/output voltage (max) (V)	3.3
Supply current (typ) (µA)	40	ESD HBM (typ) (kV)	3
Operating temperature range (°C)	-40 to 85	Crosstalk (dB)	-68
COFF (typ) (pF)	1	CON (typ) (pF)	0.5
Off isolation (typ) (dB)	-34	OFF-state leakage current (max) (µA)	5
Ron (max) (mΩ)	11200	Ron channel match (max) (Ω)	1
RON flatness (typ) (Ω)	0.6	Turnoff time (disable) (max) (ns)	65
Turnon time (enable) (max) (ns)	65	VIH (min) (V)	1.4
VIL (max) (V)	0.5

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Bewertungen und Rezensionen

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R**n 10.06.2023

Avaq's customer service surpassed my expectations. They were attentive, helpful, and ensured a smooth buying experience. I appreciate their prompt responses to my queries regarding the TS3DDR4000ZBAR components. Highly recommended seller.

D**s 01.24.2023

Avaq's delivery speed is remarkable! I received my TS3DDR4000ZBAR components in record time, allowing me to kick-start my project without any delays. This level of efficiency sets Avaq apart from other distributors.

J**a 11.13.2022

The TS3DDR4000ZBAR electronic components I received from Avaq were exceptional. The quality was top-notch, and they performed flawlessly in my project. Avaq's commitment to delivering only the best is truly commendable.

D**n 10.06.2022

The TS3DDR4000ZBAR components received from Avaq surpassed my expectations. They were in pristine condition, and their performance in my project was flawless. Highly recommended!