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Siehe Technische Spezifikationen

W29N01HVSINA +BOM

48-Pin TSOP-I Package

Hersteller:

Winbond
Herstellerteil #:

W29N01HVSINA
Datenblatt:

W29N01HVSINA Datenblatt (PDF)
Mounting Style:

SMD/SMT
Series:

W29N01HV
Memory Size:

1 Gbit
Interface Type:

Parallel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an W29N01HVSINA

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

W29N01HVSINA Allgemeine Beschreibung

Devices such as smartphones, tablets, digital cameras, and more benefit from the superior speed and efficiency offered by the W29N01HVSINA NAND flash memory chip. Its high-speed data transfer rates, coupled with low power consumption, make it a preferred choice for manufacturers looking to enhance the performance of their products. The chip's advanced features like wear-leveling and error correction further solidify its reputation for data integrity and longevity, ensuring that stored information remains secure and accessible over time

Hauptmerkmale

· Single 5-volt write (erase and program) operations
· Fast page-write operations
- 256 bytes per page
- Page write (erase/program) cycle: 5 mS (typ.)
- Effective byte-write (erase/program) cycle time: 19.5 mS
- Optional software-protected data write
· Fast chip-erase operation: 50 mS
· Two 16 KB boot blocks with lockout
· Page write (erase/program) cycles: 50K (typ.)
· Read access time: 70/90/120 nS
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
- Active current: 25 mA (typ.)
- Standby current: 20 mA (typ.)
·Automaticwrite (erase/program) timing with internal VPP generation
· End of write (erase/program) detection
- Toggle bit
- Data polling
· Latched address and data
· All inputs and outputs directly TTL compatible
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin 600 mil DIP, TSOP and PLCC

Spezifikationen

Product Category	NAND Flash	Mounting Style	SMD/SMT
Series	W29N01HV	Memory Size	1 Gbit
Interface Type	Parallel	Organization	128 M x 8
Data Bus Width	8 bit	Supply Voltage - Min	2.7 V
Supply Voltage - Max	3.6 V	Supply Current - Max	35 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Active Read Current - Max	35 mA	Moisture Sensitive	Yes
Product Type	NAND Flash	Factory Pack Quantity	288
Subcategory	Memory & Data Storage	Unit Weight	0.324873 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..