Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

W631GU6KB-12 +BOM

1Gbit DDR3L SDRAM

Hersteller:

WINBOND ELECTRONICS CORP
Herstellerteil #:

W631GU6KB-12
Datenblatt:

W631GU6KB-12 Datenblatt (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

96
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an W631GU6KB-12

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

W631GU6KB-12 Allgemeine Beschreibung

The W631GU6KB-12 is a high-performance 2Gb DDR3 SDRAM module that is perfect for demanding applications such as gaming, multimedia, and virtualization. With a data rate of 1600Mbps and a voltage of 1.5V, this module provides reliable and efficient performance for a wide range of computer systems. Its 240-pin configuration and 128Mx16 array organization ensure seamless compatibility and easy installation, making it a great choice for users looking to upgrade their system's memory

Hauptmerkmale

 Power Supply: VDD, VDDQ = 1.5V ± 0.075V
 Double Data Rate architecture: two data transfers per clock cycle
 Eight internal banks for concurrent operation
 8 bit prefetch architecture
 CAS Latency: 6, 7, 8, 9, 10, 11 and 13
 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On The-Fly (OTF)
 Programmable read burst ordering: interleaved or nibble sequential
 Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
 Edge-aligned with read data and center-aligned with write data
 DLL aligns DQ and DQS transitions with clock
 Differential clock inputs (CK and CK#)
 Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
 Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
 Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
 Auto-precharge operation for read and write bursts
 Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
 Precharged Power Down and Active Power Down

Spezifikationen

Part Life Cycle Code	Obsolete	Pin Count	96
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.32	Access Mode	MULTI BANK PAGE BURST
Access Time-Max	0.225 ns	Additional Feature	AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)	800 MHz	I/O Type	COMMON
Interleaved Burst Length	8	JESD-30 Code	R-PBGA-B96
Length	13 mm	Memory Density	1073741824 bit
Memory IC Type	DDR3L DRAM	Memory Width	16
Number of Functions	1	Number of Ports	1
Number of Terminals	96	Number of Words	67108864 words
Number of Words Code	64000000	Operating Mode	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min
Organization	64MX16	Output Characteristics	3-STATE
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Power Supplies	1.35 V
Qualification Status	Not Qualified	Refresh Cycles	8192
Seated Height-Max	1.2 mm	Self Refresh	YES
Sequential Burst Length	8	Standby Current-Max	0.014 A
Supply Current-Max	0.4 mA	Supply Voltage-Max (Vsup)	1.45 V
Supply Voltage-Min (Vsup)	1.283 V	Supply Voltage-Nom (Vsup)	1.35 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	OTHER	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Width	9 mm

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..