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W9412G6IH-5 +BOM

DDR DRAM 8MX16 0.7ns CMOS PDSO66 0.400 INCH ROHS COMPLIANT TSOP2-66

  • Hersteller:

    Winbond Electronics

  • Herstellerteil #:

    W9412G6IH-5

  • Datenblatt:

    W9412G6IH-5 Datenblatt (PDF) pdf-icon

  • Programmabe:

    Not Verified

  • Memory Type:

    Volatile

  • Memory Format:

    DRAM

  • Technology:

    SDRAM - DDR

W9412G6IH-5 Allgemeine Beschreibung

Offering a winning combination of speed, capacity, and efficiency, the W9412G6IH-5 is a top-of-the-line SDRAM chip tailor-made for modern computing and telecommunications applications. Boasting a generous 512 MB capacity, this chip can effortlessly handle large volumes of data, making it an essential component for high-performance systems that require reliable memory storage. With a lightning-fast data transfer rate of 166 MHz, the W9412G6IH-5 ensures speedy access to stored information, enabling seamless data processing and task execution. Additionally, its low power consumption of 1.8V makes it an eco-friendly choice for organizations looking to reduce their carbon footprint and energy costs. Whether you're working on a cutting-edge computing project or upgrading your network infrastructure, the W9412G6IH-5 is the high-speed, low-power solution you've been searching for

Hauptmerkmale

  • 2.5V ±0.2V Power Supply for DDR266/DDR333
  • 2.6V ±0.1V Power Supply for DDR400/DDR500
  • Up to 250 MHz Clock Frequency
  • Double Data Rate architecture; two data transfers per clock cycle
  • Differential clock inputs (CLK and CLK )
  • DQS is edge-aligned with data for Read; center-aligned with data for Write
  • CAS Latency: 2, 2.5 and 3
  • Burst Length: 2, 4 and 8
  • Auto Refresh and Self Refresh
  • Precharged Power Down and Active Power Down
  • Write Data Mask
  • Write Latency = 1
  • 7.8µS refresh interval (8K / 64 mS refresh)
  • Maximum burst refresh cycle: 8
  • Interface: SSTL_2
  • Packaged in TSOP II 66-pin, 400 mil, 0.65 mm pin pitch, using Pb free with RoHS compliant

Spezifikationen

Programmabe Not Verified Memory Type Volatile
Memory Format DRAM Technology SDRAM - DDR
Memory Size 128Mbit Memory Organization 8M x 16
Memory Interface Parallel Clock Frequency 200 MHz
Write Cycle Time - Word, Page 15ns Access Time 50 ns
Voltage - Supply 2.3V ~ 2.7V Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount Base Product Number W9412G6

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