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DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin WBGA
BGAHersteller:
WINBOND ELECTRONICS CORP
Herstellerteil #:
W9725G6JB-25
Datenblatt:
Part Life Cycle Code:
Obsolete
Pin Count:
84
ECCN Code:
EAR99
HTS Code:
8542.32.00.24
EDA/CAD Modelle:
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Power Supply: VDD, VDDQ = 1.8 V0.1V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and CLK )
Data masks (DM) for write data
Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
Posted CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
Packaged in WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant
Part Life Cycle Code | Obsolete | Pin Count | 84 |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | Access Mode | MULTI BANK PAGE BURST |
Access Time-Max | 0.4 ns | Additional Feature | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 400 MHz | I/O Type | COMMON |
Interleaved Burst Length | 4,8 | JESD-30 Code | R-PBGA-B84 |
Length | 12.5 mm | Memory Density | 268435456 bit |
Memory IC Type | DDR2 DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports | 1 |
Number of Terminals | 84 | Number of Words | 16777216 words |
Number of Words Code | 16000000 | Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | |
Organization | 16MX16 | Output Characteristics | 3-STATE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Power Supplies | 1.8 V |
Qualification Status | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 4,8 | Standby Current-Max | 0.006 A |
Supply Current-Max | 0.135 mA | Supply Voltage-Max (Vsup) | 1.9 V |
Supply Voltage-Min (Vsup) | 1.7 V | Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | OTHER | Terminal Form | BALL |
Terminal Pitch | 0.8 mm | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Width | 8 mm |
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