Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

W972GG8KB25I +BOM

56MX8 0.4ns CMOS PBGA60

Hersteller:

WINBOND ELECTRONICS CORP
Herstellerteil #:

W972GG8KB25I
Datenblatt:

W972GG8KB25I Datenblatt (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.32.00.36
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an W972GG8KB25I

W972GG8KB25I Allgemeine Beschreibung

What sets the W972GG8KB25I apart from other NAND flash memory chips is its exceptional speed capabilities. Operating at a maximum clock frequency of 50MHz, this chip enables rapid read and write operations, ideal for scenarios where quick data transfer is crucial. Its x8 I/O interface and 2KB page size further enhance its efficiency, while the organization of 64 blocks, each containing 64 pages, ensures optimal data management

Hauptmerkmale

Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and CLK )
Data masks (DM) for write data.
Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
Posted CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
Packaged in WBGA 60 Ball (11x11.5 mm2), using Lead free materials with RoHS compliant

Spezifikationen

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.36
Access Mode	MULTI BANK PAGE BURST	Access Time-Max	0.4 ns
Additional Feature	AUTO/SELF REFRESH	JESD-30 Code	R-PBGA-B60
Length	12.5 mm	Memory Density	2147483648 bit
Memory IC Type	DDR2 DRAM	Memory Width	8
Number of Functions	1	Number of Ports	1
Number of Terminals	60	Number of Words	268435456 words
Number of Words Code	256000000	Operating Mode	SYNCHRONOUS
Organization	256MX8	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Seated Height-Max	1.2 mm	Self Refresh	YES
Supply Voltage-Max (Vsup)	1.9 V	Supply Voltage-Min (Vsup)	1.7 V
Supply Voltage-Nom (Vsup)	1.8 V	Surface Mount	YES
Technology	CMOS	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Width	8 mm

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..