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Alle Ergebnisse für "BC5" ( 127 )
Beliebte Hersteller
- Artikelnummer
- Hersteller
- Beschreibung
- Datenblatt
- Betrieb
- BC517
- Onsemi
- NPN Bipolar Darlington Transistor
- Datenblatt
- BC557B
- Diotec Semiconductor
- PNP Bipolar Transistor
- Datenblatt
- BC546B
- Onsemi
- 65V 625mW 200@2mA,5V 100mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
- Datenblatt
- BC549C
- Onsemi
- 30V 625mW 100mA TO-92 Bipolar Transistors - BJT ROHS
- Datenblatt
- BC547B
- Onsemi
- 45V 625mW 200@2mA,5V 100mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
- Datenblatt
- BC557BG
- onsemi
- PNP Bipolar Transistor
- Datenblatt
- BC517G
- onsemi
- Bipolar (BJT) Transistor NPN - Darlington 30 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)
- Datenblatt
- BC549CTA
- Onsemi
- This transistor has a current rating of 100mA and a DC current gain of 420 at 2mA and 5V
- Datenblatt
- BC57E687C-GITB-E4
- QUALCOMM
- SINGLE CHIP BLUETOOTH V2.1 + EDR SYSTEM
- Datenblatt
- BC57G687C-GITM-E4
- Qualcomm
- Bluetooth Chip Module
- Datenblatt
- BC57K687A07-IQF-E4
- Qualcomm
- IC RF 68-QFN
- Datenblatt
- BC560CTA
- Onsemi
- BC560CTA PNP Epitaxial Silicon Transistor
- Datenblatt
- BC550CBU
- onsemi
- NPN Epitaxial Silicon Transistor
- Datenblatt
- BC556BG
- onsemi
- PNP Bipolar Transistor
- Datenblatt
- BC557BZL1G
- onsemi
- Bipolar (BJT) Transistor PNP 45 V 100 mA 320MHz 625 mW Through Hole TO-92 (TO-226)
- Datenblatt
- BC557CG
- onsemi
- Bipolar (BJT) Transistor PNP 45 V 100 mA 320MHz 625 mW Through Hole TO-92 (TO-226)
- Datenblatt
- BC517-D74Z
- onsemi
- NPN Bipolar Darlington Transistor
- Datenblatt
- BC550CTA
- Onsemi
- General Purpose NPN Bipolar Junction Transistor (BJT) in TO-92 Package, Capable of Handling 45V Voltage and 0
- Datenblatt
- BC517RL1G
- onsemi
- Bipolar (BJT) Transistor NPN - Darlington 30 V 1 A 200MHz 1.5 W Through Hole TO-92 (TO-226)
- Datenblatt
- BC560CG
- Onsemi
- This through-hole transistor has a power dissipation of 625mW at a frequency of 250MHz
- Datenblatt