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Siehe Technische Spezifikationen

2N7002T-7-F +BOM

Channel Enhancement Mode Transistor SOT-523 Channel 60 V 7.5 Ohm

Hersteller:

Diodes Incorporated
Herstellerteil #:

2N7002T-7-F
Datenblatt:

2N7002T-7-F Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an 2N7002T-7-F

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

2N7002T-7-F Allgemeine Beschreibung

Its SOT-523 case style and surface mount device termination type make it ideal for compact and space-constrained designs. With a maximum operating temperature of 150°C, it can withstand high-temperature environments, while its minimum operating temperature of -55°C allows for reliable performance in cold conditions

Hauptmerkmale

HIGH RELIABILITY

Anwendung

SWITCHING

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	78 Weeks
Additional Feature	HIGH RELIABILITY	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	0.115 A
Drain-source On Resistance-Max	13.5 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	5 pF	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	0.15 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	115 mA
Rds On - Drain-Source Resistance	7.5 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	150 mW	Channel Mode	Enhancement
Series	2N7002T	Forward Transconductance - Min	80 mS
Height	0.75 mm	Length	1.6 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time	11 ns	Typical Turn-On Delay Time	7 ns
Width	0.8 mm	Unit Weight	0.000071 oz

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