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Siehe Technische Spezifikationen

AFT05MS003NT1 +BOM

Transistor RF FET N-CH 30V 1.8MHz to 941MHz 3-Pin SOT-89 T/R

Hersteller:

NXP
Herstellerteil #:

AFT05MS003NT1
Datenblatt:

AFT05MS003NT1 Datenblatt (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Id - Continuous Drain Current:

2.6 A
Vds - Drain-Source Breakdown Voltage:

- 500 mV, 30 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an AFT05MS003NT1

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

AFT05MS003NT1 Allgemeine Beschreibung

The AFT05MS003NT1 is a high-frequency RF transistor designed for use in a variety of applications. With a drain source voltage of 30VDC and a maximum power dissipation of 30.5W, this transistor is capable of delivering reliable performance in demanding conditions. Its operating frequency range of 1.8MHz to 941MHz makes it suitable for a wide range of RF applications, from telecommunications to industrial controls. The SOT-89-3 case design allows for easy integration into circuit boards, with 3 pins for simple connection. Operating at a maximum temperature of 150°C, this transistor can withstand high-temperature environments without sacrificing performance. The AFT05MS003NT1 is a versatile and reliable RF transistor that meets the highest industry standards

Hauptmerkmale

Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band:
− 136--174 MHz
− 380--450 MHz
− 450--520 MHz
225°C Capable Plastic Package
Exceptional Thermal Performance
High Linearity for: TETRA, SSB, LTE
Cost--effective Over--molded Plastic Packaging
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.

Anwendung

AMPLIFIER

Spezifikationen

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	2.6 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 30 V	Operating Frequency	1.8 MHz to 941 MHz
Gain	20.8 dB	Output Power	3.2 W
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT	Number of Channels	1 Channel
Pd - Power Dissipation	30.5 W	Product Type	RF MOSFET Transistors
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	LDMOS FET	Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 6 V, 12 V	Vgs th - Gate-Source Threshold Voltage	2.2 V
Part # Aliases	935312585147	Unit Weight	0.001792 oz

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