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Siehe Technische Spezifikationen

BAS216,115 +BOM

A ceramic package-2 houses a silicon signal diode with a current rating of 0.25A and a voltage capacity of 85V

Hersteller:

NXP SEMICONDUCTORS
Herstellerteil #:

BAS216,115
Datenblatt:

BAS216,115 Datenblatt (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

2
ECCN Code:

EAR99
HTS Code:

8541.10.00.70
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an BAS216,115

BAS216,115 Allgemeine Beschreibung

One of the key features of the BAS216,115 is its ability to handle high voltages and currents, making it suitable for a wide range of applications. Whether you need to regulate power in a circuit or protect sensitive components from voltage spikes, this diode is up to the task. Its fast switching speed also makes it ideal for applications where rapid response time is crucial

Hauptmerkmale

Small ceramic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.

Anwendung

High-speed switching in e.g.
surface mounted circuits.

Spezifikationen

Source Content uid	BAS216,115	Part Life Cycle Code	Obsolete
Pin Count	2	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8541.10.00.70
Configuration	SINGLE	Diode Element Material	SILICON
Diode Type	RECTIFIER DIODE	Forward Voltage-Max (VF)	1.25 V
JESD-30 Code	R-CDSO-R2	Non-rep Pk Forward Current-Max	4 A
Number of Elements	1	Number of Phases	1
Number of Terminals	2	Operating Temperature-Max	150 °C
Output Current-Max	0.25 A	Peak Reflow Temperature (Cel)	260
Power Dissipation-Max	0.4 W	Qualification Status	Not Qualified
Rep Pk Reverse Voltage-Max	85 V	Reverse Current-Max	1 µA
Reverse Recovery Time-Max	0.004 µs	Surface Mount	YES
Terminal Form	WRAP AROUND	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	40	Technology	Standard
Voltage - DC Reverse (Vr) (Max)	75 V	Current - Average Rectified (Io)	250mA
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 150 mA	Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	4 ns	Current - Reverse Leakage @ Vr	1 µA @ 75 V
Capacitance @ Vr, F	1.5pF @ 0V, 1MHz	Mounting Type	Surface Mount
Operating Temperature - Junction	150°C (Max)	Base Product Number	BAS21

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