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Epitaxial, medium-speed switching diode with a low-leakage current encapsulated in a small SOD323 SMD plastic package.
SOD-323Hersteller:
Nexperia USA Inc.
Herstellerteil #:
BAS416,115
Datenblatt:
Part Life Cycle Code:
Active
Pin Count:
2
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Modelle:
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Featuring a low leakage current, the NXP BAS416,115 diode is ideal for use in precision instrumentation, sensor circuits, and low power consumption devices. Its high voltage capability makes it suitable for voltage regulation and protection applications. The SOD-323 package allows for easy integration onto circuit boards, making it a convenient choice for design engineers
Source Content uid | BAS416,115 | Part Life Cycle Code | Active |
Pin Count | 2 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code | 8541.10.00.70 |
Configuration | SINGLE | Diode Element Material | SILICON |
Diode Type | RECTIFIER DIODE | JESD-30 Code | R-PDSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Phases | 1 |
Number of Terminals | 2 | Operating Temperature-Max | 150 °C |
Output Current-Max | 0.2 A | Peak Reflow Temperature (Cel) | 260 |
Power Dissipation-Max | 0.25 W | Qualification Status | Not Qualified |
Reference Standard | AEC-Q101; IEC-60134 | Rep Pk Reverse Voltage-Max | 85 V |
Reverse Recovery Time-Max | 3 µs | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Technology | Standard | Voltage - DC Reverse (Vr) (Max) | 75 V |
Current - Average Rectified (Io) | 200mA | Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
Speed | Small Signal =< 200mA (Io), Any Speed | Reverse Recovery Time (trr) | 3 µs |
Current - Reverse Leakage @ Vr | 5 nA @ 75 V | Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
Grade | Automotive | Qualification | AEC-Q100 |
Mounting Type | Surface Mount | Operating Temperature - Junction | 150°C (Max) |
Base Product Number | BAS416 |
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