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BAS416,115 +BOM

Epitaxial, medium-speed switching diode with a low-leakage current encapsulated in a small SOD323 SMD plastic package.

BAS416,115 Allgemeine Beschreibung

Featuring a low leakage current, the NXP BAS416,115 diode is ideal for use in precision instrumentation, sensor circuits, and low power consumption devices. Its high voltage capability makes it suitable for voltage regulation and protection applications. The SOD-323 package allows for easy integration onto circuit boards, making it a convenient choice for design engineers

Hauptmerkmale

  • Anti-surge protection
  • Good reliability
  • Easy installation

Anwendung

  • High efficiency LED lighting
  • Eco-friendly household products
  • Space-saving electronic devices

Spezifikationen

Source Content uid BAS416,115 Part Life Cycle Code Active
Pin Count 2 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.10.00.70
Configuration SINGLE Diode Element Material SILICON
Diode Type RECTIFIER DIODE JESD-30 Code R-PDSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Phases 1
Number of Terminals 2 Operating Temperature-Max 150 °C
Output Current-Max 0.2 A Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W Qualification Status Not Qualified
Reference Standard AEC-Q101; IEC-60134 Rep Pk Reverse Voltage-Max 85 V
Reverse Recovery Time-Max 3 µs Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Technology Standard Voltage - DC Reverse (Vr) (Max) 75 V
Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 3 µs
Current - Reverse Leakage @ Vr 5 nA @ 75 V Capacitance @ Vr, F 2pF @ 0V, 1MHz
Grade Automotive Qualification AEC-Q100
Mounting Type Surface Mount Operating Temperature - Junction 150°C (Max)
Base Product Number BAS416

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