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BSC059N04LS6 +BOM

High-performance N-channel Transistor for efficient power manageme

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

BSC059N04LS6
Datenblatt:

BSC059N04LS6 Datenblatt (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

10 mJ
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an BSC059N04LS6

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

BSC059N04LS6 Allgemeine Beschreibung

The OptiMOS™ 6 power MOSFET 40V family, represented by product code BSC059N04LS6, offers a range of benefits for various applications. Specifically optimized for tasks such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, and quick chargers, as well as ORing circuits, this product is versatile and efficient. One key advantage lies in the improvements in on-state resistance (RDS(on)), which ultimately contributes to increased efficiency. Moreover, the figure of merits (FOM), which includes RDS(on) x Qg and Qgd, are also enhanced with this MOSFET. This enhancement allows designers to improve thermal design and reduce the need for paralleling, ultimately leading to cost savings in system development. In summary, the OptiMOS™ 6 power MOSFET 40V family provides a valuable solution for design engineers looking to optimize performance and reduce overall system costs in a variety of electronic applications

Spezifikationen

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	10 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	40 V	Drain Current-Max (ID)	49 A
Drain-source On Resistance-Max	0.0084 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-F3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	236 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..