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Siehe Technische Spezifikationen

BSC080N03LSG +BOM

0 Volt N-CHANNEL Power MOSFET with 0.012 ohm

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

BSC080N03LSG
Datenblatt:

BSC080N03LSG Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

8
Reach Compliance Code:

not_compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an BSC080N03LSG

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

BSC080N03LSG Allgemeine Beschreibung

The outstanding features of the BSC080N03LSG include its low gate charge and high efficiency, which contribute to reduced power loss and enhanced thermal performance. This allows for optimal operation and reliability, even in demanding environments. Additionally, its compact form factor and high switching frequency capability make it a versatile option for compact designs and high-performance applications

Spezifikationen

Source Content uid	BSC080N03LSG	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Pin Count	8
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	Avalanche Energy Rating (Eas)	15 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	14 A
Drain-source On Resistance-Max	0.012 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-F8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	34 W
Pulsed Drain Current-Max (IDM)	212 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 53A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8mOhm @ 30A, 10V	Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 15 V	Power Dissipation (Max)	2.5W (Ta), 35W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC080

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