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CGHV35060MP +BOM

RF JFET Transistor for GaN HEMT with 60 Watt power rating

Hersteller:

Wolfspeed
Herstellerteil #:

CGHV35060MP
Datenblatt:

CGHV35060MP Datenblatt (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN
Operating Frequency:

3.5 GHz
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an CGHV35060MP

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

CGHV35060MP Allgemeine Beschreibung

Wolfspeed, a Cree Company, has set a new standard in RF and microwave applications with its CGHV35060MP GaN HEMT. This high-power transistor offers a drain-source voltage of 28V, a maximum drain current of 8A, and a power output of up to 80W, making it perfectly suited for radar systems, satellite communications, and ISM equipment. With its emphasis on high efficiency and reduced heat dissipation, this transistor delivers exceptional performance in demanding applications. Its built-in ESD protection ensures long-term reliability, while its compact package size and excellent thermal conductivity make it an ideal choice for small footprint designs and high-power density requirements. The CGHV35060MP is a true powerhouse in the world of high-power transistors, offering unmatched performance and reliability for critical applications

Spezifikationen

Product Category	RF JFET Transistors	Shipping Restrictions	This product may require additional documentation to export from the United States.
Transistor Type	HEMT	Technology	GaN
Operating Frequency	3.5 GHz	Gain	14.5 dB
Transistor Polarity	N-Channel	Vds - Drain-Source Breakdown Voltage	150 V
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V	Id - Continuous Drain Current	10.4 A
Output Power	75 W	Maximum Drain Gate Voltage	50 V
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 107 C
Pd - Power Dissipation	52 W	Mounting Style	SMD/SMT
Application	S Band Radar and LTE base stations	Configuration	Single
Operating Temperature Range	- 40 C to + 107 C	Product Type	RF JFET Transistors
Factory Pack Quantity	250	Subcategory	Transistors
Vgs th - Gate-Source Threshold Voltage	- 3 V

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