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DTC114YMT2L +BOM

Advanced electronic component for digital applications

DTC114YMT2L Allgemeine Beschreibung

ROHM Semiconductor's DTC114YMT2L digital transistor offers designers a compact and efficient solution for digital circuitry. This NPN transistor features built-in bias resistors that streamline circuit design, eliminating the hassle of incorporating additional components. With a collector current rating of 100mA and a collector-base voltage of 50V, the DTC114YMT2L provides reliable performance in a small SOT-323 package, making it an excellent choice for projects with limited space constraints. Whether used in logic level shifting, interface circuits, or other digital logic applications, this digital transistor is designed to meet the demands of modern electronic designs where space-saving and simplicity are paramount

Hauptmerkmale

BUILT IN BIAS RESISTOR RATIO IS 4.7

Anwendung

SWITCHING

Spezifikationen

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.21.00.75
Factory Lead Time 53 Weeks, 1 Day Additional Feature BUILT IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.1 A Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR DC Current Gain-Min (hFE) 68
JESD-30 Code R-PDSO-F3 JESD-609 Code e2
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.15 W Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu) Terminal Form FLAT
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz

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