Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

IXBF32N300 +BOM

Very High Voltage IGBTs - Product IXBF32N300

Hersteller:

Littelfuse Inc
Herstellerteil #:

IXBF32N300
Datenblatt:

IXBF32N300 Datenblatt (PDF)
Series:

BIMOSFET™
Voltage - Collector Emitter Breakdown (Max):

3000 V
Current - Collector (Ic) (Max):

40 A
Current - Collector Pulsed (Icm):

250 A
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IXBF32N300

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXBF32N300 Allgemeine Beschreibung

With the introduction of BiMOSFETs, a new era of power semiconductor technology has dawned, bringing together the unique advantages of MOSFETs and IGBTs in a single device. The use of non-epitaxial construction and advanced fabrication processes has enabled BiMOSFETs to excel in high voltage applications, setting new benchmarks for performance and reliability. One of the key features that sets BiMOSFETs apart is their suitability for parallel operation, owing to the favorable voltage temperature coefficients of their saturation voltage and intrinsic diode forward voltage drop. Moreover, the presence of an intrinsic body diode in BiMOSFETs serves as a protective barrier during device turn-off, diverting inductive load currents and preventing voltage transients that could potentially damage the device. This innovative design not only enhances the robustness of BiMOSFETs but also simplifies their usage in a wide range of power electronics applications

Hauptmerkmale

Compact design
Efficient switching
Safe operation

Anwendung

High-efficiency UPS systems
Advanced pulser circuits
High-voltage transformers

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	BIMOSFET™
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	3000 V
Current - Collector (Ic) (Max)	40 A	Current - Collector Pulsed (Icm)	250 A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 32A	Power - Max	160 W
Switching Energy	-	Input Type	Standard
Gate Charge	142 nC	Td (on/off) @ 25°C	-
Test Condition	-	Reverse Recovery Time (trr)	1.5 µs
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXBF32

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

Garantie

365-Tage-Produkt

Qualitätsgarantie

Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.

Bewertungen und Rezensionen

Mehr

M**n 05.07.2021

Delivery to rostov-30 days. Everything corresponds to the description. Seller-thank you!

J**b 06.28.2020

Got it fast. Everything works fine.

K**a 05.19.2020

The NAU8810YG components I received from Avaq were in pristine condition, exactly what I expected from a reputable distributor. Avaq's commitment to quality is evident.

J**b 02.23.2020

I did not count, but i hope, all the norms! Seller thanks!