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Siehe Technische Spezifikationen

IXBH42N170 +BOM

Single IGBT Discrete Diode, 42A, 1700V, BIMOSFET TO247

Hersteller:

Littelfuse Inc
Herstellerteil #:

IXBH42N170
Datenblatt:

IXBH42N170 Datenblatt (PDF)
Series:

BIMOSFET™
Voltage - Collector Emitter Breakdown (Max):

1700 V
Current - Collector (Ic) (Max):

80 A
Current - Collector Pulsed (Icm):

300 A
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IXBH42N170

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXBH42N170 Allgemeine Beschreibung

The IXBH42N170 BiMOSFETs offer a unique combination of MOSFET and IGBT strengths, making them highly efficient and versatile devices. With a non-epitaxial construction and advanced fabrication processes, these high voltage components have proven to be a remarkable success in the market. The positive voltage temperature coefficient of both the saturation voltage and the forward voltage drop of the intrinsic diode allows for seamless parallel operation, enhancing overall performance and reliability. Additionally, the built-in intrinsic body diode acts as a protective mechanism, offering an alternative pathway for inductive load current during device turn-off. This feature helps prevent high voltage transients and ensures the longevity of the device, making it a preferred choice for various applications requiring high voltage handling capabilities

Hauptmerkmale

Improved system performance
Reduced power consumption and cooling costs
Simplified design and reduced BOM
Faster time-to-market and reduced development costs

Anwendung

UPS for power supplies
Induction heating systems
Hybrid electric vehicles

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	BIMOSFET™
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	80 A	Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 42A	Power - Max	360 W
Switching Energy	-	Input Type	Standard
Gate Charge	188 nC	Td (on/off) @ 25°C	-
Test Condition	-	Reverse Recovery Time (trr)	1.32 µs
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXBH42

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Zahlung

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..