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Siehe Technische Spezifikationen

IXBK75N170 +BOM

IGBT 1700 V 200 A 1040 W Through Hole TO-264AA

Hersteller:

Littelfuse Inc
Herstellerteil #:

IXBK75N170
Datenblatt:

IXBK75N170 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.7 kV
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IXBK75N170

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXBK75N170 Allgemeine Beschreibung

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Hauptmerkmale

High blocking voltage
High power density
High current handling capability
Low conduction losses
MOS gate turn on for drive simplicity
International standard and proprietary ISOPLUS
TM
packages
Benefits:
Eliminates multiple series-parallel lower voltage, lower current rated
devices
Simpler system design
Improved reliability
Reduced component count
Reduced system cost

Anwendung

Radar transmitter power supplies
Radar pulse modulators
Capacitor discharge circuits
High voltage power supplies
AC switches
HV circuit breakers
Pulser circuits
High voltage test equipment
Laser & X-ray generators

Spezifikationen

Product Category:	IGBT Transistors	Technology:	Si
Mounting Style:	Through Hole	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.7 kV	Collector-Emitter Saturation Voltage:	3.1 V
Maximum Gate Emitter Voltage:	- 20 V, + 20 V	Continuous Collector Current at 25 C:	200 A
Pd - Power Dissipation:	1.04 kW	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C	Series:	IXBK75N170
Packaging:	Tube	Height:	26.16 mm
Length:	19.96 mm	Product Type:	IGBT Transistors
Factory Pack Quantity:	25	Subcategory:	IGBTs
Tradename:	BIMOSFET	Width:	5.13 mm
Unit Weight:	0.373904 oz

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

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Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

Garantie

365-Tage-Produkt

Qualitätsgarantie

Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.

Bewertungen und Rezensionen

Mehr

D**s 03.26.2024

I put 5 stars in absentia. Came quickly, i will not collect and my son. I hope the complete set of parts.

R**a 05.02.2022

I am thoroughly impressed with Avaq's fast delivery and excellent customer service. The NRF24L01P components I purchased arrived ahead of schedule and were exactly what I needed.

J**h 07.15.2020

very good. received items in 5 days

S**n 06.25.2020

I received the parcel. Came quickly. After checking in the work, write off. Thanks to the seller.