Bezahlverfahren
IXBL60N360 +BOM
IGBTs ROHS 3.6kV 417W 92A
TO-247-
Hersteller:
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Herstellerteil #:
IXBL60N360
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Datenblatt:
-
Series:
BIMOSFET™
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Voltage - Collector Emitter Breakdown (Max):
3600 V
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Current - Collector (Ic) (Max):
92 A
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Current - Collector Pulsed (Icm):
720 A
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EDA/CAD Modelle:
Verfügbarkeit: 3488 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
IXBL60N360 Allgemeine Beschreibung
The IXBL60N360 BiMOSFETs represent a groundbreaking development in power semiconductor technology, combining the best features of MOSFETs and IGBTs in a single device. The innovative non-epitaxial construction and specialized fabrication processes employed in their manufacturing have resulted in a product that excels in performance and durability. These high voltage devices are particularly well-suited for parallel operation, thanks to their unique characteristics and positive voltage temperature coefficient. Additionally, the intrinsic body diode acts as a fail-safe, safeguarding the device against potentially damaging voltage spikes during operation
Hauptmerkmale
- Magnetic shielding for electromagnetic compatibility
- Robust against voltage surges
- Low leakage current
Anwendung
- Power supply applications
- High voltage circuits
- AC switching devices
Spezifikationen
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | BIMOSFET™ |
IGBT Type | - | Voltage - Collector Emitter Breakdown (Max) | 3600 V |
Current - Collector (Ic) (Max) | 92 A | Current - Collector Pulsed (Icm) | 720 A |
Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 60A | Power - Max | 417 W |
Switching Energy | - | Input Type | Standard |
Gate Charge | 450 nC | Td (on/off) @ 25°C | 50ns/340ns |
Test Condition | 960V, 60A, 4.7Ohm, 15V | Reverse Recovery Time (trr) | 1.95 µs |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IXBL60 | Product Category | IGBT Transistors |
Technology | Si | Mounting Style | Through Hole |
Height | 26.42 mm | Length | 20.29 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 25 |
Subcategory | IGBTs | Tradename | BIMOSFET |
Width | 5.21 mm |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 3.488
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $307,141 | $307,14 |
200+ | $122,551 | $24.510,20 |
500+ | $118,456 | $59.228,00 |
1000+ | $116,433 | $116.433,00 |
Die unten angegebenen Preise dienen nur als Referenz.
Alle Stücklisten (BOM) können per E-Mail gesendet werden an [email protected], oder füllen Sie das untenstehende Formular aus, um ein Angebot für IXBL60N360 zu erstellen, garantierte Angebote zurück innerhalb 12 Std.
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