Bezahlverfahren
IXBL64N250 +BOM
Transistor IGBT Chip in N-Channel Configuration
TO-264-
Hersteller:
-
Herstellerteil #:
IXBL64N250
-
Datenblatt:
-
Series:
BIMOSFET™
-
Voltage - Collector Emitter Breakdown (Max):
2500 V
-
Current - Collector (Ic) (Max):
116 A
-
Current - Collector Pulsed (Icm):
750 A
-
EDA/CAD Modelle:
Verfügbarkeit: 7012 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
IXBL64N250 Allgemeine Beschreibung
BiMOSFETs represent a revolutionary advancement in high voltage device technology, combining the best attributes of MOSFETs and IGBTs for unparalleled performance and durability. Through innovative manufacturing processes and non-epitaxial design, these devices excel in parallel operation, providing exceptional efficiency and reliability. The positive voltage temperature coefficient and built-in protection diode enhance overall system performance and safeguard against damaging voltage transients, making BiMOSFETs a preferred choice for high voltage applications across various industries. As a versatile solution for complex circuitry requirements, BiMOSFETs offer a reliable and efficient option for modern engineering challenges
Hauptmerkmale
- "Compact design for space savings"
- "Robust construction for reliability"
- "Easy to integrate into existing systems"
Anwendung
- Particle accelerators
- Gas discharge lamps
- Photocopiers
Spezifikationen
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | BIMOSFET™ |
IGBT Type | - | Voltage - Collector Emitter Breakdown (Max) | 2500 V |
Current - Collector (Ic) (Max) | 116 A | Current - Collector Pulsed (Icm) | 750 A |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 64A | Power - Max | 500 W |
Switching Energy | - | Input Type | Standard |
Gate Charge | 400 nC | Td (on/off) @ 25°C | - |
Test Condition | - | Reverse Recovery Time (trr) | 160 ns |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IXBL64 | Pin Count | 3 |
Released Date | Apr 30, 2022 | Last Modified Date | Mar 7, 2023 4:10 PM UTC |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 7.012
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $352,005 | $352,00 |
200+ | $140,453 | $28.090,60 |
500+ | $135,759 | $67.879,50 |
1000+ | $133,440 | $133.440,00 |
Die unten angegebenen Preise dienen nur als Referenz.
Alle Stücklisten (BOM) können per E-Mail gesendet werden an [email protected], oder füllen Sie das untenstehende Formular aus, um ein Angebot für IXBL64N250 zu erstellen, garantierte Angebote zurück innerhalb 12 Std.
Top Sellers
-
IXGH48N60C3D1
Littelfuse
100+ $5,861
-
IXTQ460P2
Littelfuse
900+ $1,936
-
IXGH60N60C2
Littelfuse
Restricted to OEMs and CMs, no third-party involvement
-
IXGR48N60C3D1
Littelfuse
IXGR48N60C3D1 by IXYS SEMICONDUCTOR is an Insulated Gate Bipolar Transistor (IGBT) with a current rating of 56 A
-
IXLF19N250A
Littelfuse Inc
IGBT Transistors High Voltage IGBT 2500V; 19A
This time the delivery is long, but received. thank