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N-channel MOSFET designed for use in various power electronics circuits demanding high voltage and current handling capabilities
TO-268-3Hersteller:
Herstellerteil #:
IXTT110N10L2
Datenblatt:
Part Life Cycle Code:
Active
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
Additional Feature:
AVALANCHE RATED
EDA/CAD Modelle:
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
By addressing the common problem of device failure during linear-mode operation, the IXTT110N10L2 Power MOSFET offers a solution that enhances overall system efficiency and longevity. Its unique design allows for greater flexibility in operating conditions, providing a level of robustness that typical MOSFETs lack
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 3000 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 110 A | Drain-source On Resistance-Max | 0.018 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-268AA |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 600 W | Pulsed Drain Current-Max (IDM) | 300 A |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 110 A |
Rds On - Drain-Source Resistance | 18 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 260 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 600 W | Channel Mode | Enhancement |
Series | IXTT110N10 | Fall Time | 24 ns |
Forward Transconductance - Min | 45 S | Product Type | MOSFET |
Rise Time | 130 ns | Factory Pack Quantity | 30 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 99 ns | Typical Turn-On Delay Time | 28 ns |
Unit Weight | 0.229281 oz |
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12 Std.