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Siehe Technische Spezifikationen

K6R4008C1D-UI10 +BOM

With a memory organization of 512Kx8, this chip offers high-speed performance suitable for a variety of applications."

Hersteller:

Samsung Semiconductor
Herstellerteil #:

K6R4008C1D-UI10
Datenblatt:

K6R4008C1D-UI10 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
ECCN Code:

3A991.B.2.A
HTS Code:

8542.32.00.41
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an K6R4008C1D-UI10

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

K6R4008C1D-UI10 Allgemeine Beschreibung

The K6R4008C1D-UI10 is a high-performance SDRAM chip renowned for its impressive storage capacity of 4 megabits, equivalent to 512 kilobytes. This chip is a powerhouse when it comes to enhancing the speed and efficiency of computer systems. With a supply voltage of 3.3 volts, it delivers reliable performance while supporting data transfer rates ranging from 133 to 166 MHz. The chip's 4-bank architecture ensures seamless and rapid data access, making it a reliable choice for demanding computing tasks. Its designation of "C1D" suggests additional features or enhancements that further elevate its capabilities, making it a sought-after component for a wide range of applications

Hauptmerkmale

The K6R4008C1D-UI10 features a capacity of 4 megabits.
It operates at a speed of 100 MHz with high performance.
This chip is organized as 256K words by 16 bits for efficient data storage.
The K6R4008C1D-UI10 is manufactured by Samsung for reliable usage.
This SDRAM chip supports fast data transfer and retrieval.
Its housing in a 44-pin TSOP-II package ensures easy integration with PCBs.

Anwendung

Faster memory for electronics
Reliable RAM for telecommunications
Efficient memory for embedded systems

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
ECCN Code	3A991.B.2.A	HTS Code	8542.32.00.41
Access Time-Max	10 ns	I/O Type	COMMON
JESD-30 Code	R-PDSO-G44	JESD-609 Code	e1
Length	18.41 mm	Memory Density	4194304 bit
Memory IC Type	STANDARD SRAM	Memory Width	8
Moisture Sensitivity Level	3	Number of Functions	1
Number of Terminals	44	Number of Words	524288 words
Number of Words Code	512000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	512KX8	Output Characteristics	3-STATE
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	260
Power Supplies	5 V	Qualification Status	Not Qualified
Seated Height-Max	1.2 mm	Standby Current-Max	0.005 A
Standby Voltage-Min	4.5 V	Supply Current-Max	0.075 mA
Supply Voltage-Max (Vsup)	5.5 V	Supply Voltage-Min (Vsup)	4.5 V
Supply Voltage-Nom (Vsup)	5 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	TIN SILVER COPPER	Terminal Form	GULL WING
Terminal Pitch	0.8 mm	Terminal Position	DUAL
Width	10.16 mm

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