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K9LBG08U0D +BOM

Hersteller:

SAMSUNG
Herstellerteil #:

K9LBG08U0D
Datenblatt:

K9LBG08U0D Datenblatt (PDF)
Paket/Koffer:

TSOP48
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an K9LBG08U0D

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

K9LBG08U0D Allgemeine Beschreibung

GENERAL DESCRIPTION Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,314-byte page and an erase operation can be performed in typical 1.5ms on a (512K+27.25K)byte block. Data in the data register can be read out at 30ns(K9XDG08U5D: 50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9LBG08U0D′s extended reliability of TBD cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9LBG08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Hauptmerkmale

1. It is a 2Gbit (256MB) memory chip.
2. The interface is NAND Flash (5V).
3. It operates on a single 2.7V to 3.6V supply voltage.
4. Its package is a 48-ball VFBGA.

Anwendung

1. It is commonly used in consumer electronic devices such as smartphones, tablets, cameras, and portable media players.
2. It is also utilized in automotive electronics, industrial equipment, network devices, and solid-state drives (SSDs).

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