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Siehe Technische Spezifikationen

RC28F00AM29EWLA +BOM

NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns 64-Pin Fortified BGA Tray

Hersteller:

MICRON TECHNOLOGY INC
Herstellerteil #:

RC28F00AM29EWLA
Datenblatt:

RC28F00AM29EWLA Datenblatt (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an RC28F00AM29EWLA

RC28F00AM29EWLA Allgemeine Beschreibung

The RC28F00AM29EWLA is a highly reliable 16MB NOR flash memory chip manufactured by Intel Corporation. Its 28nm design, coupled with a maximum clock frequency of 104MHz, ensures fast read and program times, making it an ideal choice for applications in industrial automation, automotive systems, consumer electronics, and networking equipment. With a low power consumption and a data retention period of up to 20 years, this memory chip offers high endurance and is well-suited to meet the demands of various industries

Hauptmerkmale

Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (32,64,128 Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous page-mode reads
— 32-Byte Write buffer; 4 µs per Byte Effective programming time
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
Security
— Enhanced security options for code protection
— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology

Spezifikationen

Pbfree Code	No	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code	8542.32.00.51	Access Time-Max	100 ns
Alternate Memory Width	8	Command User Interface	YES
Common Flash Interface	YES	Data Polling	YES
JESD-30 Code	R-PBGA-B64	JESD-609 Code	e0
Length	13 mm	Memory Density	1073741824 bit
Memory IC Type	FLASH	Memory Width	16
Number of Functions	1	Number of Sectors/Size	1K
Number of Terminals	64	Number of Words	67108864 words
Number of Words Code	64000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	64MX16	Page Size	16/32 words
Parallel/Serial	PARALLEL	Power Supplies	3/3.3 V
Programming Voltage	2.7 V	Qualification Status	Not Qualified
Ready/Busy	YES	Seated Height-Max	1.4 mm
Sector Size	128K	Standby Current-Max	0.00024 A
Supply Current-Max	0.031 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	2.7 V	Supply Voltage-Nom (Vsup)	3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	TIN LEAD SILVER
Terminal Form	BALL	Terminal Pitch	1 mm
Terminal Position	BOTTOM	Toggle Bit	YES
Type	NOR TYPE	Width	11 mm

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