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RC48F4400P0VB0EJ +BOM

NOR FLASH EASYBGA-64(8x10) ROHS

RC48F4400P0VB0EJ Allgemeine Beschreibung

For automotive, industrial, and networking devices requiring high-performance non-volatile memory, the Intel RC48F4400P0VB0EJ 4GB NOR flash memory chip is the ideal choice. Its parallel interface, 1.8V voltage, and clock frequency of up to 108MHz ensure superior performance, while the fast read access time of 50ns delivers quick data retrieval. Packaged in a reliable 64-ball VFBGA, with a typical erase time of 3ms and program time of 12µs, this chip is efficient and powerful. Additionally, it supports block locking and unlocking, security ID, and extended addressing modes, providing flexible data storage options for various applications

Hauptmerkmale

  • High performance
  • — 85/88 ns initial access
  • — 40 MHz with zero wait states, 20 ns clock-to-data output
  • synchronous-burst read mode
  • — 25 ns asynchronous-page read mode
  • — 4-, 8-, 16-, and continuous-word burst mode
  • — Buffered Enhanced Factory Programming
  • (BEFP) at 5 µs/byte (Typ)
  • — 1.8 V buffered programming at 7 µs/byte (Typ)
  • Architecture
  • — Multi-Level Cell Technology: Highest Density
  • at Lowest Cost
  • — Asymmetrically-blocked architecture
  • — Four 32-KByte parameter blocks: top or
  • bottom configuration
  • — 128-KByte main blocks
  • Voltage and Power
  • — VCC (core) voltage: 1.7 V – 2.0 V
  • — VCCQ (I/O) voltage: 1.7 V – 3.6 V
  • — Standby current: 55 µA (Typ) for 256-Mbit
  • — 4-Word synchronous read current:
  • 13 mA (Typ) at 40 MHz
  • Quality and Reliability
  • — Operating temperature: –40 °C to +85 °C
  • 1-Gbit in SCSP is –30 °C to +85 °C
  • — Minimum 100,000 erase cycles per block
  • — ETOX™ VIII process technology (130 nm)
  • Security
  • — One-Time Programmable Registers:
  • 64 unique factory device identifier bits
  • 64 user-programmable OTP bits
  • Additional 2048 user-programmable OTP bits
  • — Selectable OTP Space in Main Array:
  • 4x32KB parameter blocks + 3x128KB main
  • blocks (top or bottom configuration)
  • — Absolute write protection: VPP = VSS
  • — Power-transition erase/program lockout
  • — Individual zero-latency block locking
  • — Individual block lock-down
  • Software
  • — 20 µs (Typ) program suspend
  • — 20 µs (Typ) erase suspend
  • — Intel® Flash Data Integrator optimized
  • — Basic Command Set and Extended Command
  • Set compatible
  • — Common Flash Interface capable
  • Density and Packaging
  • — 64/128/256-Mbit densities in 56-Lead TSOP
  • package
  • — 64/128/256/512-Mbit densities in 64-Ball
  • Intel® Easy BGA package
  • — 64/128/256/512-Mbit and 1-Gbit densities in
  • Intel® QUAD+ SCSP
  • — 16-bit wide data bus

Spezifikationen

Pbfree Code No Part Life Cycle Code Obsolete
Reach Compliance Code not_compliant ECCN Code EAR99
HTS Code 8542.32.00.51 Access Time-Max 17 ns
Additional Feature IT ALSO HAVE ASYNCHRONOUS OPERATING MODE Boot Block BOTTOM/TOP
Command User Interface YES Common Flash Interface YES
Data Polling NO JESD-30 Code R-PBGA-B64
JESD-609 Code e0 Length 13 mm
Memory Density 536870912 bit Memory IC Type FLASH
Memory Width 16 Number of Functions 1
Number of Sectors/Size 8, 510 Number of Terminals 64
Number of Words 33554432 words Number of Words Code 32000000
Operating Mode SYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C Organization 32MX16
Parallel/Serial PARALLEL Peak Reflow Temperature (Cel) 235
Power Supplies 1.8,1.8/3.3 V Programming Voltage 1.8 V
Qualification Status Not Qualified Seated Height-Max 1.2 mm
Sector Size 16K,64K Standby Current-Max 0.00042 A
Supply Current-Max 0.031 mA Supply Voltage-Max (Vsup) 2 V
Supply Voltage-Min (Vsup) 1.7 V Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Finish Tin/Lead/Silver (Sn/Pb/Ag)
Terminal Form BALL Terminal Pitch 1 mm
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) 30
Toggle Bit NO Type NOR TYPE
Width 10 mm

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