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Siehe Technische Spezifikationen

RUM002N02T2L +BOM

ROHS compliant 150mW N-channel SOT-723 MOSFET with 200mA current rating and 1V at 1mA voltage

Hersteller:

Rohm Semiconductor
Herstellerteil #:

RUM002N02T2L
Datenblatt:

RUM002N02T2L Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an RUM002N02T2L

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

RUM002N02T2L Allgemeine Beschreibung

Designed to excel in low current consumption scenarios, the RUM002N02T2L MOSFET is a standout product known for its ultra-low ON-resistance achieved through innovative micro-processing technologies. Its versatility is highlighted by a wide range of options, including compact, high-power, and complex types, catering to diverse needs in the market. Whether you are working on a project that requires space-efficient components, high-power capabilities, or a combination of both, the RUM002N02T2L MOSFET offers a solution that is both effective and reliable

Anwendung

SWITCHING

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	53 Weeks, 1 Day
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	0.2 A	Drain-source On Resistance-Max	1.4 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F3
JESD-609 Code	e2	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	0.15 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Tin/Copper (Sn/Cu)
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	10	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V	Id - Continuous Drain Current	200 mA
Rds On - Drain-Source Resistance	1.2 Ohms	Vgs - Gate-Source Voltage	- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	150 mW	Channel Mode	Enhancement
Series	RUM002N02	Fall Time	10 ns
Forward Transconductance - Min	200 mS	Product Type	MOSFET
Rise Time	10 ns	Factory Pack Quantity	8000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	15 ns	Typical Turn-On Delay Time	5 ns
Part # Aliases	RUM002N02	Unit Weight	0.000053 oz

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