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SUM70101EL-GE3 +BOM

SUM70101EL-GE3 Vishay P-Channel 100-V (D-S) 175C Mosfet Rohs Compliant: Yes

SUM70101EL-GE3 Allgemeine Beschreibung

The SUM70101EL-GE3 is a powerful P-channel MOSFET designed for high-performance applications. With a drain source voltage (Vds) of -100V and a continuous drain current (Id) of -120A, this transistor offers reliable and efficient operation. Its low on resistance (Rds(on) of 0.0081ohm) and high threshold voltage (Vgs) of -2.5V make it suitable for demanding tasks. The TO-263 case style and 3 pins provide easy integration into various electronic systems. With a high power dissipation of 375W and an operating temperature max of 175°C, this MOSFET is built to withstand extreme conditions. Part of the TrenchFET Series, it meets the stringent requirements of automotive applications. Its MSL 1 - Unlimited and absence of SVHC make it a safe and reliable choice for electronic designs

Hauptmerkmale

  • Fast switching times guaranteed
  • Robust thermal management ensured
  • Industry-standard compatible design

Spezifikationen

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 120 A
Rds On - Drain-Source Resistance 10.1 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V Qg - Gate Charge 125 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 375 W Channel Mode Enhancement
Configuration Single Fall Time 40 ns
Forward Transconductance - Min 60 S Product Type MOSFET
Rise Time 40 ns Factory Pack Quantity 800
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 110 ns Typical Turn-On Delay Time 20 ns
Unit Weight 0.139332 oz

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