Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

THGBMDG5D1LBAIT +BOM

Ultra-low power, high-capacity storage module for mobile and automotive use case

Hersteller:

KIOXIA
Herstellerteil #:

THGBMDG5D1LBAIT
Datenblatt:

THGBMDG5D1LBAIT Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Date Of Intro:

2017-01-11
JESD-30 Code:

R-PBGA-B153
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an THGBMDG5D1LBAIT

THGBMDG5D1LBAIT Allgemeine Beschreibung

The THGBMDG5D1LBAIT is a cutting-edge 128GB NAND flash memory chip developed by Toshiba, showcasing the latest BiCS4 3D flash memory technology with a remarkable 96 layers of 3D NAND architecture. This innovative chip is engineered to meet the demands of various devices, including smartphones, tablets, SSDs, and other portable gadgets requiring rapid and efficient data storage capabilities. With its impressive data transfer speed, this chip ensures swift access to stored information, significantly enhancing overall performance. Not only does it deliver superior speed, but it also offers exceptional reliability and endurance, making it an ideal choice for continuous and prolonged usage in a wide range of applications. In addition, the THGBMDG5D1LBAIT boasts a compact form factor and low power consumption, making it a perfect fit for small and energy-efficient devices where space and battery life are critical factors. Furthermore, advanced error correction and wear-leveling technologies are integrated into the chip to guarantee data integrity and longevity, emphasizing its commitment to providing a reliable and sustainable storage solution

Spezifikationen

Source Content uid	THGBMDG5D1LBAIT	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code
Date Of Intro	2017-01-11	JESD-30 Code	R-PBGA-B153
Memory Density	34359738368 bit	Memory IC Type	MEMORY CIRCUIT
Memory Width	8	Number of Functions	1
Number of Terminals	153	Number of Words	4294967296 words
Number of Words Code	4000000000	Operating Temperature-Max	85 °C
Operating Temperature-Min	-25 °C	Organization	4GX8
Surface Mount	YES	Technology	CMOS
Temperature Grade	OTHER	Terminal Form	BALL
Terminal Position	BOTTOM

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..