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W632GG6KB15I +BOM

DDR3 SDRAM 2Gbit DRAM Chip

Hersteller:

Winbond
Herstellerteil #:

W632GG6KB15I
Datenblatt:

W632GG6KB15I Datenblatt (PDF)
Type:

SDRAM - DDR3
Mounting Style:

SMD/SMT
Data Bus Width:

16 bit
Organization:

128 M x 16
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an W632GG6KB15I

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

W632GG6KB15I Allgemeine Beschreibung

Featuring state-of-the-art DDR4 SDRAM technology, the W632GG6KB15I chip delivers unmatched performance and energy efficiency. Its high-speed data transfer rates make it ideal for demanding applications in the computing and networking sectors. The chip's compact form factor and dependable operation have solidified its position as a preferred solution for semiconductor needs across the electronics industry

Hauptmerkmale

 Power Supply: VDD, VDDQ = 1.5V ± 0.075V
 Double Data Rate architecture: two data transfers per clock cycle
 Eight internal banks for concurrent operation
 8 bit prefetch architecture
 CAS Latency: 6, 7, 8, 9, 10, 11 and 13
 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On The-Fly (OTF)
 Programmable read burst ordering: interleaved or nibble sequential
 Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
 Edge-aligned with read data and center-aligned with write data
 DLL aligns DQ and DQS transitions with clock
 Differential clock inputs (CK and CK#)
 Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
 Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
 Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
 Auto-precharge operation for read and write bursts
 Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
 Precharged Power Down and Active Power Down

Spezifikationen

Product Category	DRAM	Type	SDRAM - DDR3
Mounting Style	SMD/SMT	Data Bus Width	16 bit
Organization	128 M x 16	Memory Size	2 Gbit
Maximum Clock Frequency	667 MHz	Supply Voltage - Max	1.575 V
Supply Voltage - Min	1.425 V	Supply Current - Max	125 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 95 C
Series	W632GG6KB	Moisture Sensitive	Yes
Product Type	DRAM	Factory Pack Quantity	190
Subcategory	Memory & Data Storage	Part Life Cycle Code	Obsolete
Pin Count	96	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.36
Access Mode	MULTI BANK PAGE BURST	Access Time-Max	0.255 ns
Additional Feature	AUTO/SELF REFRESH	Clock Frequency-Max (fCLK)	667 MHz
I/O Type	COMMON	Interleaved Burst Length	8
JESD-30 Code	R-PBGA-B96	Length	13 mm
Memory Density	2147483648 bit	Memory IC Type	DDR3 DRAM
Memory Width	16	Number of Functions	1
Number of Ports	1	Number of Terminals	96
Number of Words	134217728 words	Number of Words Code	128000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Output Characteristics	3-STATE
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Power Supplies	1.5 V
Qualification Status	Not Qualified	Refresh Cycles	8192
Seated Height-Max	1.2 mm	Self Refresh	YES
Sequential Burst Length	8	Standby Current-Max	0.065 A
Supply Current-Max	0.37 mA	Supply Voltage-Max (Vsup)	1.575 V
Supply Voltage-Min (Vsup)	1.425 V	Supply Voltage-Nom (Vsup)	1.5 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Width	9 mm

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