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Siehe Technische Spezifikationen

2N3956 +BOM

JFET N-Channel JFET 50mA

Hersteller:

Texas Instruments, Inc
Herstellerteil #:

2N3956
Datenblatt:

2N3956 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Configuration:

Dual

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2N3956 Allgemeine Beschreibung

The 2N3956 is a JFET transistor that operates in the enhancement mode. It is primarily used as a voltage-controlled resistor or as a low-power amplifier in electronic circuits. JFETs are known for their high input impedance, low noise performance, and simplicity of use.

Hauptmerkmale

N-Channel JFET: The 2N3956 is an N-channel JFET, meaning that it is a three-terminal device with a source, drain, and gate terminal.
Enhancement Mode: This JFET operates in the enhancement mode, which means that it requires a positive voltage applied to the gate terminal to control the current flow between the source and drain terminals.
Low Noise: It offers low noise performance, making it suitable for applications where signal integrity is critical.
High Input Impedance: JFETs are known for their high input impedance, which allows them to interface with high-impedance signal sources without loading the source excessively.
Wide Operating Temperature Range: It is typically designed to operate within a wide temperature range, ensuring its suitability for various environmental conditions.

Anwendung

Analog Signal Processing: It can be utilized as a voltage-controlled resistor or variable resistance element in analog circuits such as filters, attenuators, and voltage-controlled amplifiers.
Instrumentation Amplifiers: The low noise and high input impedance characteristics of the 2N3956 make it suitable for instrumentation amplifiers used in sensitive measurement and sensor circuits.
Audio Amplifiers: It can be employed in low-power audio amplifiers or preamplifiers, where low noise and high input impedance are desired.
Oscillators and Generators: It can be used in oscillators or waveform generators where its voltage-controlled resistance property is utilized to control the frequency or shape of the generated signal.

Spezifikationen

Product Category:	JFET	Technology:	Si
Mounting Style:	Through Hole	Transistor Polarity:	N-Channel
Configuration:	Dual	Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Breakdown Voltage:	- 50 V	Gate-Source Cutoff Voltage:	- 4.5 V
Drain-Source Current at Vgs=0:	5 mA	Id - Continuous Drain Current:	200 uA
Pd - Power Dissipation:	250 mW	Packaging:	Bulk
Forward Transconductance - Min:	1000 uS	Product Type:	JFETs
Factory Pack Quantity:	1	Subcategory:	Transistors
Type:	JFET

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