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AT-41485 +BOM

RF Bipolar Transistors General purpose transistor

Hersteller:

HEWLETT PACKARD CO
Herstellerteil #:

AT-41485
Datenblatt:

AT-41485 Datenblatt (PDF)
Part Life Cycle Code:

Transferred
ECCN Code:

EAR99
HTS Code:

8541.21.00.75
Additional Feature:

LOW NOISE, HIGH RELIABILITY
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Fordern Sie kostenlose CAD-Modelle für an AT-41485

AT-41485 Allgemeine Beschreibung

DescriptionHewlett-Packard’s AT-41485 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41485 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω at 900 MHz, makes this device easy to use as a low noise amplifier.Features• Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz• High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz• High Gain-Bandwidth Product: 8.0 GHz Typical fT

Spezifikationen

Part Life Cycle Code	Transferred	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8541.21.00.75
Additional Feature	LOW NOISE, HIGH RELIABILITY	Collector Current-Max (IC)	0.06 A
Collector-Emitter Voltage-Max	12 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	30	Highest Frequency Band	C BAND
JESD-30 Code	O-PRDB-F4	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	4
Operating Temperature-Max	150 °C	Polarity/Channel Type	NPN
Power Dissipation Ambient-Max	0.5 W	Power Dissipation-Max (Abs)	0.5 W
Power Gain-Min (Gp)	17.5 dB	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	FLAT	Terminal Position	RADIAL
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	8000 MHz

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