Bezahlverfahren
ATF-55143-BLKG +BOM
ATF-55143-BLKG is a 4-pin SOT-343 RF amplifier from Broadcom, designed for low noise operation
SC-70-
Hersteller:
BROADCOM INC
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Herstellerteil #:
ATF-55143-BLKG
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Datenblatt:
-
Part Life Cycle Code:
Obsolete
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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HTS Code:
8541.21.00.75
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EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for ATF-55143-BLKG, guaranteed quotes back within 12hr.
Verfügbarkeit: 8641 Stck
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ATF-55143-BLKG Allgemeine Beschreibung
The ATF-55143-BLKG is a cutting-edge Low Noise Pseudomorphic high electron mobility transistor (pHEMT) tailored for the demands of radio frequency (RF) and microwave applications. Operating seamlessly within the 100 MHz to 6 GHz frequency range, this device offers a remarkable fusion of low noise figure, high gain, and top-notch linearity performance
Hauptmerkmale
- High linearity performance
- Single Supply Enhancement Mode Technology [1]
- Very low noise fgure
- Excellent uniformity in product specifcations
- 400 micron gate width
- Low cost surface mount small plastic package SOT-343 (4 lead SC-70)
- Tape-and-Reel packaging option available
- Lead Free Option Available
- Specif cations
- 2 GHz; 2.7V, 10 mA (Typ.)
- 24.2 dBm output 3rd order intercept
- 14.4 dBm output power at 1 dB gain compression
- 0.6 dB noise fgure
- 17.7 dB associated gain
- Lead-free option available
Anwendung
AMPLIFIERSpezifikationen
Part Life Cycle Code | Obsolete | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code | 8541.21.00.75 |
Case Connection | SOURCE | Configuration | SINGLE |
DS Breakdown Voltage-Min | 5 V | Drain Current-Max (ID) | 0.1 A |
FET Technology | HIGH ELECTRON MOBILITY | Highest Frequency Band | C BAND |
JESD-30 Code | R-PDSO-G4 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 4 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation Ambient-Max | 0.27 W |
Power Gain-Min (Gp) | 15.5 dB | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 20 | Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
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In Stock: 8.641
Minimum Order: 1
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