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BLF188XRU +BOM

Transistor BLF188XRU: a high-frequency

Hersteller:

Ampleon
Herstellerteil #:

BLF188XRU
Datenblatt:

BLF188XRU Datenblatt (PDF)
ECCN (US):

EAR99
HTS:

8541.21.00.95
Configuration:

Dual Common Source
Channel Mode:

Enhancement
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an BLF188XRU

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

BLF188XRU Allgemeine Beschreibung

In the realm of UHF broadcast applications, the BLF188XRU stands as a formidable force, embodying power, efficiency, and reliability in equal measure. With an impressive capacity to deliver 1400 watts of CW power, this high-power LDMOS transistor operates seamlessly within a voltage range of 28-32V. Boasting a gain of 16dB at 860MHz, it ensures exceptional performance in broadcast settings, combining power and precision with finesse. Its rugged design and high thermal stability make it an ideal choice for challenging environments, guaranteeing consistent performance under varying conditions. Moreover, the inclusion of input and output matching networks simplifies system design, contributing to enhanced efficiency across the board. With a maximum operating frequency of 1100MHz, the BLF188XRU caters to a diverse range of broadcast applications, from television to radio transmitters, with unparalleled versatility. Housed in a compact air-cavity ceramic package, it excels in thermal management and RF performance, making it a standout option for broadcast professionals

Hauptmerkmale

Operates from 1030-1090 MHz
Provides 1400 Watts of output power
Can handle up to 20:1 VSWR
Designed for FM broadcast transmitters
Offers high efficiency and reliability
Includes input/output matching networks
Compact and rugged design
Ideal for high-power RF applications

Anwendung

Global positioning systems
Smart home technology
Industrial automation

Spezifikationen

ECCN (US)	EAR99	Part Status	Active
HTS	8541.21.00.95	Configuration	Dual Common Source
Channel Mode	Enhancement	Channel Type	N
Number of Elements per Chip	2	Mode of Operation	Pulsed RF
Process Technology	LDMOS	Maximum Drain Source Voltage (V)	135
Maximum Gate Source Voltage (V)	11	Maximum Gate Threshold Voltage (V)	2.25
Maximum VSWR	65	Maximum Gate Source Leakage Current (nA)	280
Maximum IDSS (uA)	2.8	Maximum Drain Source Resistance (mOhm)	80(Typ)@6V
Typical Input Capacitance @ Vds (pF)	534@50V	Typical Reverse Transfer Capacitance @ Vds (pF)	5.5@50V
Typical Output Capacitance @ Vds (pF)	212@50V	Output Power (W)	1400
Typical Power Gain (dB)	24.4	Maximum Frequency (MHz)	600
Minimum Frequency (MHz)	10	Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	225	Packaging	Bulk
Mounting	Screw	PCB changed	5
Pin Count	5

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Bewertungen und Rezensionen

Mehr

J**n 12.30.2022

The parcel was 43 days old, delivered ukrpost. Packed in an envelope with pouches. Tracked to a transit point in germany.The legs are thin, but the diodes are working (checked in the diagram)

A**a 11.23.2022

It came in eight days, outwardly everything corresponds. I will try to add a tip. By the way, at the output are capacitors at 35 v, the output voltage on the power supply can be 35 volts, i think and above can be raised, or it will lead to overload of capacitors and they can explode. Be careful when setting up

Z**y 05.02.2022

excellent design by using pc usb to step up the voltage with adjustable option from 1.2 to 24v dc

Z**a 06.11.2021

On the microcontrollers traces of paint, on the pins traces of stripping. There is a suspicion that they are new. At first, only one in five worked. After the recovery of fuses by the programmer and full cleaning of memory earned.