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Siehe Technische Spezifikationen

DMN3200U-7 +BOM

Single N-Channel 30 V 200 mOhm 650 mW Silicon Surface Mount Mosfet - SOT-23

Hersteller:

Diodes Inc
Herstellerteil #:

DMN3200U-7
Datenblatt:

DMN3200U-7 Datenblatt (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

2.2A (Ta)
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an DMN3200U-7

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

DMN3200U-7 Allgemeine Beschreibung

Packaged in a compact 3.3mm x 3.3mm PowerDI3333 package, the DMN3200U-7 exemplifies high power dissipation and thermal efficiency within a small footprint. Furthermore, its RoHS-compliant and lead-free construction not only ensures environmental sustainability but also guarantees seamless integration with modern manufacturing processes. In conclusion, the DMN3200U-7 stands out as a reliable and high-performing choice for power management solutions across various industries

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V	Rds On (Max) @ Id, Vgs	90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA	Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 10 V	FET Feature	-
Power Dissipation (Max)	650mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	DMN3200
feature-category	Small Signal	feature-material
feature-process-technology		feature-configuration	Single
feature-channel-mode	Enhancement	feature-channel-type	N
feature-number-of-elements-per-chip	1	feature-maximum-drain-source-voltage-v	30
feature-maximum-gate-source-voltage-v	±8	feature-maximum-gate-threshold-voltage-v
feature-maximum-continuous-drain-current-a	2.2	feature-maximum-drain-source-resistance-mohm	[email protected]
feature-typical-gate-charge-vgs-nc		feature-typical-gate-charge-10v-nc
feature-typical-input-capacitance-vds-pf	290@10V	feature-typical-output-capacitance-pf
feature-maximum-power-dissipation-mw	650	feature-packaging	Tape and Reel
feature-rad-hard		feature-pin-count	3
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc		feature-svhc-exceeds-threshold	No

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..