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DMN62D0U-13 +BOM

Transistor MOSFET N-CH 60V 380mA 3-Pin SOT-23 T/R

Hersteller:

DIODES
Herstellerteil #:

DMN62D0U-13
Datenblatt:

DMN62D0U-13 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an DMN62D0U-13

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

DMN62D0U-13 Allgemeine Beschreibung

The DMN62D0U-13 is a N-channel MOSFET suitable for a wide range of applications in various industries. With a drain source voltage of 60V and a continuous drain current of 380mA, this transistor offers reliable performance. The on resistance of 1.2ohm and threshold voltage of 1V ensure efficient operation in different circuit designs. The SOT-23 transistor case style with 3 pins makes it easy to integrate into existing systems. Operating at a maximum temperature of 150°C, this MOSFET can withstand harsh environmental conditions. Its power dissipation of 380mW ensures stable and consistent performance over extended periods. This product does not contain any SVHC as per the information provided on 15-Jan-2019, making it a safe choice for use in various applications

Hauptmerkmale

Low On-Resistance: RDS(ON)

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected Up To 2kV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. Green Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

Anwendung

SWITCHING

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	84 Weeks	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	0.38 A
Drain-source On Resistance-Max	2 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	2.4 pF	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.59 W
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..