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DMP4065S-7 +BOM

P-Channel Enhancement Mode Mosfet

Hersteller:

Diodes Incorporated
Herstellerteil #:

DMP4065S-7
Datenblatt:

DMP4065S-7 Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an DMP4065S-7

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

DMP4065S-7 Allgemeine Beschreibung

The DMP4065S-7 is a P-Channel MOSFET with a drain source voltage (Vds) of -40V and a continuous drain current (Id) of -2.4A. It has an on resistance (Rds(on)) of 0.064ohm and a threshold voltage (Vgs) of -3V. With a power dissipation (Pd) of 720mW, this transistor is designed to operate at a maximum temperature of 150°C. The DMP4065S-7 comes in a SOT-23 case style with 3 pins and is qualified for automotive applications. This MOSFET is compliant with MSL 1 - Unlimited standards and does not contain any SVHC as of 15-Jan-2019

Hauptmerkmale

This transistor is suitable for power management and battery protection
Low-power applications include power management and battery protection circuits
This small signal MOSFET transistor is ideal for low-power use cases
The DMP40S65-7 has a compact SOT-23 surface-mount package
This transistor features a low threshold voltage of 1.3V
The continuous drain current is up to 11A in this MOSFET device

Anwendung

Reliable power MOSFET for long-term use
Low EMI emissions for clean operation
Easy integration into existing systems

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	3.4 A	Rds On - Drain-Source Resistance	80 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	12.2 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.4 W
Channel Mode	Enhancement	Series	DMP4065
Configuration	Single	Fall Time	15.3 ns
Height	1.1 mm	Length	2.9 mm
Product Type	MOSFET	Rise Time	2.9 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	36.3 ns
Typical Turn-On Delay Time	3.6 ns	Width	1.3 mm
Unit Weight	0.000282 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..