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Siehe Technische Spezifikationen

EM6K6T2R +BOM

Dual N-CH Small Signal 20V MOSFET

Hersteller:

Rohm Semiconductor
Herstellerteil #:

EM6K6T2R
Datenblatt:

EM6K6T2R Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

6
Reach Compliance Code:

compliant

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

EM6K6T2R Allgemeine Beschreibung

Ideal for a wide range of applications including wireless communication, radar systems, and industrial control, the EM6K6T2R's top-notch performance characteristics and compact size make it a versatile choice for designers seeking to optimize their RF and microwave circuits

Anwendung

SWITCHING

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	6	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	53 Weeks, 1 Day
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	0.3 A	Drain-source On Resistance-Max	1.4 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F6
JESD-609 Code	e2	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	0.15 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Tin/Copper (Sn98Cu2)
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	10	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	20 V	Id - Continuous Drain Current	300 mA
Rds On - Drain-Source Resistance	1 Ohms	Vgs - Gate-Source Voltage	- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage	300 mV	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	150 mW	Channel Mode	Enhancement
Series	EM6K6	Fall Time	10 ns
Height	0.5 mm	Length	1.6 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	10 ns	Factory Pack Quantity	8000
Subcategory	MOSFETs	Transistor Type	2 N-Channel MOSFET
Typical Turn-Off Delay Time	15 ns	Typical Turn-On Delay Time	5 ns
Width	1.2 mm	Part # Aliases	EM6K6
Unit Weight	0.000106 oz

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