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Siehe Technische Spezifikationen

GTVA261701FA-V1-R0 +BOM

Trans RF MOSFET N-CH 150V 7.5A 3-Pin Case H-37265J-2 T/R

Hersteller:

Wolfspeed
Herstellerteil #:

GTVA261701FA-V1-R0
Datenblatt:

GTVA261701FA-V1-R0 Datenblatt (PDF)
Transistor Type:

HEMT
Technology:

GaN-on-SiC
Operating Frequency:

2.62 GHz to 2.69 GHz
Gain:

17 dB

GTVA261701FA-V1-R0 Allgemeine Beschreibung

The GTVA261701FA-V1-R0 fixed attenuator by GT Microwave Inc. is a premium-quality product designed to deliver consistent performance in RF and microwave applications. With a wide frequency range of DC to 18 GHz, this attenuator offers versatility and reliability in signal reduction. The fixed attenuation value of 1 dB ensures a steady level of signal reduction across the operating frequency range, making it a dependable choice for professionals in the industry. The V1-R0 version and revision indicate that this is the original design with the first iteration of this specific model, highlighting the manufacturer's commitment to quality and innovation. Equipped with standard SMA connectors, the attenuator is easy to integrate into existing systems and its compact, lightweight design allows for convenient installation. Additionally, with a power handling capability of up to 2 watts, this attenuator is suitable for a wide range of applications, from laboratory settings to field use

Spezifikationen

Product Category	RF JFET Transistors	Transistor Type	HEMT
Technology	GaN-on-SiC	Operating Frequency	2.62 GHz to 2.69 GHz
Gain	17 dB	Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	150 V	Id - Continuous Drain Current	7.5 A
Output Power	170 W	Maximum Operating Temperature	+ 225 C
Mounting Style	SMD/SMT	Configuration	Single
Product Type	RF JFET Transistors	Factory Pack Quantity	50
Subcategory	Transistors	Vgs th - Gate-Source Threshold Voltage	- 3.8 V

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